Tradeshows & Conferences

2024 INFINEON WIDE-BAND-GAP FORUM

Wide-bandgap semiconductors, represented by silicon carbide and gallium nitride, have become an increasingly important driving force in the development of the green energy industry, helping to achieve higher efficiency, smaller size, lighter weight, and lower total cost.

Infineon Technologies offers a wide range of portfolios for Wide-Bandgap products, including silicon, silicon carbide and gallium nitride devices, which can bring significant efficiency gains for a variety of applications. How does Infineon’s Wide-Bandgap product portfolio contribute to the applications? How do we empower our customers to grow their business?

On 9 July, Infineon Technologies will host “2024 Infineon Wide-Bandgap Forum” in Shanghai during electronica China 2024. The theme of the forum will focus on the latest development of new materials and applications, discussing the application development of Wide-Bandgap with eco-system partners. Driving decarbonisation and digitalization. Together.

We sincerely invite you to join the Livestream.

  • Main Forum – From 10:00 AM – 12:10 PM
  • SiC Forum: 13:30 PM – 16:55 PM
  • GaN Forum: 13:30 PM -16:40 PM

To discover the full agenda and register please click HERE

Register today to watch livestream session!

Yole Group will be part of it with a Worldwide Power SiC & GaN Market Analysis and Outlook

The growth of Wide Bandgap (WBG) semiconductors is underpinned by three pillars: superior performance characteristics, expanding application areas, and significant advancements in manufacturing technologies. WBG materials, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN), offer distinct value propositions such as higher efficiency, thermal conductivity, and power density compared to traditional Silicon (Si) semiconductors. These attributes are driving their adoption across various sectors, leading to a notable shift in global market share. Si remains dominant, but SiC and GaN are rapidly gaining traction, with SiC projected to capture substantial market share, particularly in the power electronics sector.

The SiC market is forecasted to experience robust growth, fueled by the burgeoning electric vehicle (EV) market and increasing industrial applications. Battery Electric Vehicles (BEVs) are a significant driver of SiC’s growth due to their demand for efficient power conversion and management. Additionally, advancements in SiC manufacturing, such as the transition to 8-inch wafers, are expected to enhance production efficiency and scalability, making SiC more accessible and cost-effective for a broader range of applications.

Similarly, the market for Power GaN is poised for significant expansion. Beyond its established use in smartphone chargers, GaN is finding new opportunities in data centers, renewable energy systems, and automotive applications. The competition within the GaN market is intensifying, with various players striving to secure a larger market share. Companies that can innovate and scale their manufacturing processes are likely to dominate this sector.

Overall, the competitive landscape for WBG semiconductors is dynamic, with SiC and GaN poised to capture increasing market share from Si. The growth trajectory of WBG materials will be shaped by their evolving value propositions, market demands, and technological advancements in manufacturing processes.

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