Tradeshows & Conferences
THE 16TH MRAM GLOBAL INNOVATION FORUM
The MRAM Global Innovation Forum is an annual event that brings together leading experts, researchers, and industry professionals in the field of Magnetoresistive Random Access Memory (MRAM).
The forum serves as a platform for sharing the latest advancements, innovations, and research findings in MRAM technology, which is a type of non-volatile memory known for its high speed, endurance, and low power consumption.
Yole Group will be part of program with:
Simone Bertolazzi
Principal Analyst, Memory
December 12, 2024
03:30 pm – MRAM Market Dynamics and Technology Trends
Simone Bertolazzi, PhD
Principal Analyst, Memory
Simone Bertolazzi, PhD is Principal Analyst, Memory at Yole Group.
As member of the Yole Group’s Memory team, he contributes regularly to the analysis of markets and technologies, their related materials, device architectures and fabrication processes.
Previously, Simone carried out experimental research in the field of nanoscience and nanotechnology, focusing on emerging semiconducting materials and their opto-electronic device applications. He (co-) authored more than 20 papers in scientific journals and was awarded the prestigious Marie Curie Intra-European Fellowship.
Simone obtained a PhD in physics in 2015 from École Polytechnique Fédérale de Lausanne (Switzerland), where he developed novel flash memory cells based on heterostructures of two-dimensional materials and high-κ dielectrics. Simone earned a double M. A. Sc. degree from Polytechnique de Montréal (Canada) and Politecnico di Milano (Italy), graduating cum laude.
