Avalanche Technology and UMC announce 22nm production of high-density MRAM-based devices for aerospace applications

Taiwan Avalanche Technology, the leader in next generation MRAM technology, and United Microelectronics (NYSE: UMC; TWSE: 2303) (“UMC”), a semiconductor foundry, announced the immediate availability of new High-Reliability Persistent SRAM (P-SRAM) memory devices through UMC’s 22nm process technology. Based on Avalanche Technology’s latest generation of Spin Transfer Torque Magnetoresistive RAM (STT-MRAM) technology, this much anticipated third generation product platform offers significant density, endurance, reliability and power benefits over existing non-volatile solutions.

With this new product release, Avalanche Technology is bringing to market standard products that are truly enabling a variety of applications that require high endurance, reliability and density, but without the need for external batteries, ECC or wear leveling,” said Danny Sabour, Vice President of Marketing and Business Development at Avalanche Technology. “The increased ubiquity of sensors constantly recording data and high transaction applications require highly endurant memory that doesn’t wear out. We will also soon be launching development efforts to raise the bar even further toward 16Gb monolithic solutions.”

We are pleased to work with a technology leader like Avalanche Technology to bring this stand-alone memory solution into production. This is an important project to help commercialize robust and highly scalable MRAM solutions for the industry,” said G C Hung, Vice President of the Result Delivery Office and Research Development at UMC. “With our comprehensive foundry technology portfolio and focus on manufacturing excellence, UMC is well positioned to serve the growing demand for persistent memory through Avalanche Technology’s powerful solutions.

Avalanche Technology has intensively developed our innovative perpendicular Magnetic Tunnel Junctions (pMTJ) based STT MRAM technology since 2006. Our industry pMTJ and CMOS designs are enabling the most advanced high-density and high-performance STT MRAM products, which are now available through our foundry partner UMC,” said Yiming Huai, Chief Technology Officer and Vice President of Technology & Foundry Business at Avalanche Technology.

Avalanche Gen 3 Persistent SRAM

The Parallel x 32 series is offered as a standard product in various density options and has asynchronous SRAM-compatible read/write timings. Data is always non-volatile with our industry >1014 write cycle endurance and 1,000-year retention (at 85°C). Both density options are available in a small footprint 142-ball FBGA (15mm x 17mm) package. The devices are offered in the extended (-40°C to 125°C) operating temperature range with a JEDEC qualification flow, where every device goes through a 48-hour burn in before being shipped to customers. There are additional qualification screening options available through partners.