Finwave Semiconductor secures $8.2 million in funding to continue work on GaN-on-Si technology

Finwave Semiconductor, a innovator in Gallium Nitride (GaN) technology, has secured $8.2 million in a bridge funding round led by Fine Structure Ventures, Engine Ventures, and Safar Partners, with strategic participation from GlobalFoundries, its technology partner. This investment reflects strong confidence from both investors and industry stakeholders in Finwave’s GaN-on-Silicon (GaN-on-Si) platform, supporting the company’s evolution from a technology-focused innovator to a commercially driven provider of high-performance RF solutions.

The new funding will be used to accelerate Finwave’s revenue generation, broaden its product offerings, and continue advancing its GaN-on-Si technology for key market segments, including high-power RF switches and power amplifiers for communications infrastructure and mobile devices.

“We are energized by the continued support of our investors who share our vision for the commercial impact of our GaN-on-Si technology,” said Dr. Pierre-Yves Lesaicherre, CEO of Finwave. “This funding affirms the years of engineering that went into developing our proprietary technology and equips us to transition from R&D to delivering differentiated, market-ready products. More than capital, this is a vote of confidence in our direction and momentum.”

“Finwave has made impressive progress since our initial investment, positioning itself as a leader in high-performance GaN-on-Si RF components,” said Jennifer Uhrig, Senior Managing Director at Fine Structure Ventures. “Their strategic foundry partnership with GlobalFoundries and distribution agreement with RFMW highlight the strength of their design capabilities and provide a robust foundation for delivering reliable, high-performance products to market.”

As one of the most promising technologies for enabling next-generation communications and sustainable electronics, GaN is reshaping the semiconductor landscape. Finwave’s GaN-on-Si solution offers the performance advantages of GaN while leveraging the scalability and cost efficiencies of CMOS-compatible silicon wafers. The company’s portfolio includes globally available high-power RF switches and forthcoming power amplifiers, made possible through its distribution partnership with RFMW.

“From the outset, we’ve supported Finwave as they transformed their MIT-developed RF semiconductor technology into performance,” said Reed Sturtevant, General Partner at Engine Ventures. “We’re proud to reinvest as the company enters its commercial phase, scaling production through its foundry and distribution network.”

“We are excited to back Finwave’s mission to unlock a new generation of semiconductor capabilities with Gallium Nitride,” added Arunas Chesonis, Managing Partner at Safar Partners. “The Finwave platform is well-positioned to deliver transformative benefits across multiple industries in the coming years.”

With a clear product roadmap, Finwave aims to deliver cost-effective RF devices that provide enhanced performance and improved energy efficiency. Its differentiated GaN-on-Si chips are tailored for a broad range of RF applications, including communications infrastructure (base stations, MIMO, small cells, land mobile radios, CPE, and FWA), Wi-Fi routers, satellites, radar systems, drones, counter-drone systems, test and measurement equipment, and medical devices.