Infineon GaN leadership and innovation

Written by Eric Persson and Paul Wiener, from Infineon Technologies for Power Electronics News.

Gallium nitride has moved from niche to mainstream in just a few years. Once limited to niche applications such as fast chargers, GaN now powers data centers, solar inverters, and electric-mobility systems. Adoption has accelerated quickly—the GaN power device market grew nearly ninefold between 2020 and 2025—showing it is a proven choice for demanding applications.

he reason for GaN’s rise is simple: GaN’s high breakdown field and fast electron mobility result in smaller devices with very low charge, and this enables fast, low-loss switching with no minority-carrier reverse recovery. Designers can raise switching frequencies significantly to shrink magnetics and capacitors, which drives gains in efficiency and power density, ultimately creating smaller products that consume less power.

In today’s power semiconductor landscape, each material has a sweet spot:

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Source: www.powerelectronicsnews.com