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Qorvo introduces new GaN-On-SiC PAs

Qorvo has introduced three new GaN power amplifiers (PAs) that are said to achieve industry-leading power, power added efficiency (PAE) and gain. Qorvo’s newest GaN PAs are optimised for use in military radar, communications and electronic warfare systems, and include the TGM2635-CP X-band 100W MMIC amplifier for satellite communications, data links and radar applications; the TGA2307-SM C-band 50W MMIC amplifier for radar applications, in low cost plastic packaging; and the TGA2963 20W MMIC amplifier for wideband communication platforms, radar systems, electronic warfare and test instrumentation.

The three new GaN solutions allow defence manufacturers to develop cost effective next-generation systems optimised for size, weight and power, according to the company.

Roger Hall, general manager of Qorvo’s Defence & Aerospace Products business unit, said: “Defence and commercial customers recognise Qorvo for world-class performance and the most reliable and robust GaN on SiC solutions in the industry. Qorvo’s newest GaN PAs improve performance and reduce size and cost for defence radar, communications and EW systems by offering a combination of power, PAE and gain that is unmatched over their respective frequency bands.”

The TGM2635-CP operates from 7.9-11GHz and provides 50dBm of saturated output power, with 22.5 dB of large signal gain and 35 percent PAE. Available in a pure copper-base, bolt-down package, the TGM2635-CP is said to offer superior thermal management for added system flexibility.

The TGA2307-SM C-Band MMIC amplifier produces more than 47 dBm of saturated output power with a PAE greater than 44 percent and a large signal gain greater than 20dB. It is packaged in a small 6mm x 6mm plastic overmold package.

The TGA2963 wideband MMIC amplifier operates from 6-18 GHz and provides more than 43dBm saturated output power. With PAE of more than 20 percent, the TGA2963 also has a large-signal gain of more than 20dB.

Qorvo will feature the TGM2635-CP and other GaN products at IMS 2016, in San Francisco.

Source: www.compoundsemiconductor.net

 

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