Samsung Electronics to Begin Mass Production of GaN Power Semiconductors, Expanding Foundry Footprint

Samsung Electronics is set to begin operating an 8-inch (200mm) gallium nitride (GaN) power semiconductor foundry line, with full-scale production expected as early as the second quarter, according to industry sources.

The move marks Samsung’s entry into GaN foundry production more than three years after announcing plans to pursue the business. The company has already secured a customer, though expected GaN foundry revenue is projected to remain below 100 billion won due to a limited client base.

Samsung has structured its offering as a turnkey service excluding chip design, aiming to improve profitability. It also manufactures its own wafers rather than sourcing externally. GaN semiconductors use specialized wafers composed of gallium and nitrogen. While wafers were initially procured externally during pilot operations, the company has now developed mass-production-ready epitaxial (epi) wafers, which will be used in production.

Domestic rival DB HiTek similarly supplies wafers alongside foundry services but outsources packaging. DB HiTek is expected to begin GaN foundry mass production in the second half of the year, one to two quarters behind Samsung. SK Keyfoundry is also targeting the GaN foundry market, though mass production is not expected in the near term.

Power semiconductors are broadly categorized by material into GaN and silicon carbide (SiC). Compared with conventional silicon (Si), both materials feature wider bandgaps, allowing better current blocking and higher efficiency under high voltage.

GaN devices are typically used in applications below 1,200 volts, including electric vehicle charging stations and smartphone chargers. They are also key components in improving power conversion efficiency in artificial intelligence data centers. Nvidia is promoting an 800-volt direct current (DC) power architecture, which requires converting high-voltage DC into lower voltages within servers—a process where GaN-based converters are widely used. GaN offers advantages in high-voltage operation and fast switching, enabling higher power density, reduced heat generation and more compact system design.

Samsung had previously announced plans in 2023 to begin power semiconductor foundry operations in 2025, but the timeline has been delayed. Foundry businesses typically secure customers before filling capacity, and Samsung’s decision to proceed appears to follow customer acquisition over the past year.

The company is also expected to launch a silicon carbide (SiC) power semiconductor foundry line this year. Unlike GaN, Samsung plans to provide a full-service offering for SiC, covering design through packaging, with products in the 1,200- to 1,700-volt range.

Samsung said it could not confirm details regarding the GaN power semiconductor foundry operations.