SK hynix is developing NAND flash memory with more than 300 layers, after introducing a 238-layer sample last year.
The chipmaker shared its research achievements in developing a 1-terabyte NAND flash memory with over 300 layers during the International Solid-State Circuits Conference, or Isscc, held in February in San Francisco.
The Isscc is an international forum on solid-state circuits and system-on-chips, sponsored by the Institute of Electrical and Electronics Engineers (IEEE).
SK hynix advances also enabled the highest write speed, of 194 megabytes per second, according to IEEE Spectrum’s report Monday.
The higher number of layers stacked in a NAND flash translates to higher storage density.
In August last year, SK hynix introduced a sample of a 238-layer 512 gigabyte TLC 4D NAND flash memory chip for the first time at the Flash Memory Summit 2022 in Santa Clara, California, which has the most layers among existing memory semiconductors so far.
SK hynix plans to begin the mass production of the 238-layer NAND in the first half of 2023.
Micron Technology began production of the industry’s first 232-layer NAND flash in July last year, and China’s YMTC also began to manufacture 232-layer 3D NAND flash memory chips.