Si IGBT is leading the power electronic industry
“Silicon devices such as IGBTs are benefiting from mature infrastructure and processes. New device generations are coming to the market. In addition to performance improvements, Si IGBT costs will further be reduced thanks to a 12-inch Si wafer transition that will make the competition with WBG materials even tougher.” asserts Amine Allouche, Technology & Cost Analyst at Yole SystemPlus, part of Yole Group.
According to System Plus Consulting’s partner, Yole Développement (Yole), in its Status of the Power Electronics Industry 2020 report, Si devices represent the majority of the power electronics devices market. Looking back in 2019, the whole power semiconductor device market segment was worth US$17.5 billion, with a CAGR for 2019-2025 of 4.3%. IGBT modules, which represented US$3.7 billion in 2019, are traditionally used in applications such as industrial or renewable energy converters. These applications are today driven by efficiency regulations or increasing clean energy goals, and they account for 46% of the total IGBT module market. Nevertheless, the key application for power IGBT modules is undoubtedly EV/HEV, with an expected growth of 18% from 2019 to 2025.
Titre du visueljune 2021
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In this dynamic context, Yole and System Plus Consulting, both part of Yole Group of Companies, investigate disruptive power electronics technologies and related markets in depth. Both companies point out the latest innovations and underline the business opportunities.
- In its Silicon IGBT Comparison 2021 report, System Plus Consulting presents the state of the art of 31 Si IGBT transistors of eight voltage classes from 11 leading IGBT players. The report highlights the main differences and common points in device design and manufacturing processes. System Plus Consulting’s analysts point out IGBT technologies and their impact on device size and production cost.
- In parallel, System Plus Consulting analyses in details a selection of key power electronics components all year long. The Infineon EasyPACK™ FS100R12W2T7 is part of this selection. Supported by a full teardown of the module, the Infineon EasyPACK™ FS100R12W2T7 report reveals the technological choices made by the leading power electronics company, in its new IGBT7 chip.
It details the design of its diode, and the module packaging structure. It also provides insights on technology data, manufacturing cost and selling price of all module components, and includes an accurate comparison of technologies and costs of Infineon IGBT technologies : IGBT3, IGBT4, IGBT5, and IGBT7.
System Plus Consulting company is closely working with the market research and strategy consulting company, Yole to get a deep understanding of the technology evolution and market trends. In addition to System Plus Consulting’s reverse engineering and costing analyses, Yole recently released the Status of the Power Electronics Industry 2020 report to deliver an overview of the power electronics industry. Therefore, including supply chains, market trends and forecasts, player ranking and technology trends, this study examines the status of the entire power market, explore the market shares of the different device types and materials and much more…
What is the status of the IGBT technologies and their applications? What are the main market segments? What are the technological choices made by the industry leaders? System Plus Consulting presents today its latest reverse costing and engineering analyses of the IGBT technologies.
As analyzed by Yole SystemPlus’s team in the new Silicon IGBT Comparison 2021 report, Si IGBT players offer different approaches for device design. Therefore, technical choices are clearly depending on the targeted electrical performance and applications. Most of them have adopted the FS trench structure, highlights Yole SystemPlus in its Silicon IGBT Comparison 2021 report.
In this regard, Infineon Technologies introduced the new IGBT7 technology for its Easy housing platform in March 2019. Based on the new micro-pattern trench technology, the TRENCHSTOP™ IGBT7 chip has a new cell structure in contrast to the formerly used square trench cells in IGBT3 and IGBT4. This is the case for the full reverse costing study of the Infineon EasyPACK™ FS100R12W2T7, Amine Allouche explains: “This power module uses the newest IGBT and Diode technologies from Infineon: TRENCHSTOP™ IGBT7 and EC7 Diode. It drives a nominal current of 100A with a voltage rating of 1200V”.
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