Market Monitor

Power SiC/GaN Compound Semiconductor Market Monitor

Power SiC and GaN market trends: from automotive and consumer to AI datacenter power

YINTM26549

Key features

Power SiC and GaN markets continue expanding, driven by EV electrification, consumer electronics, and emerging AI datacenter demand. Despite short-term BEV slowdown and SiC overcapacity concerns, recovery from 2026 and supply chain realignment in GaN will support strong long-term growth.

Power SiC leaders faced limited growth amid the automotive slowdown, while UNT, Bosch, and Rohm strengthened their top-5 positions. In Power GaN, supply chain diversification and new applications in datacenters and automotive enabled players like Infineon and Renesas to gain market share.

Full-SiC modules dominate high-power EV inverters, with 1200V devices enabling the shift toward 800V BEVs. In GaN, discrete devices address high-power needs while integrated GaN ICs drive compact chargers. Emerging technologies like BDS and vertical GaN target future high-efficiency power systems.

Product objectives

  • Quarterly update of the data
  • Market forecast through 2031 in M$US for devices, wafers and epiwafers and units for wafers and epiwafers for Power SiC and Power GaN
  • Market forecast through 2031 by market segment including automotive, consumer, telecom and energy in M$US revenue 
  • Market forecast breakdown by technology including discrete, module and wafer size
  • Market players profiles at device, epiwafer and wafer level for Power SiC and Power GaN including STMicroelectronics, Wolfspeed, ROHM, Infineon, Onsemi, Resonac, SICC and Coherent for SiC and Infineon, EPC, Power Integrations, Renesas, Navitas and Innoscience for GaN. 

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