Market Monitor
RF GaN Compound Semiconductor Market Monitor
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YINTM25459
Key Features
- 2025-2030 forecast for RF GaN devices Telecom infrastructure, Defense, Aerospace, Consumer markets (Munits, $M)
- 2025-2030 forecast GaN-on-SiC and GaN-on-Si wafers & Epiwafer for RF GaN devices (Munits, $M)
- RF GaN Market trends, including: Split by technology platform GaN on SiC or GaN on Si for MMIC or discrete devices.
What’s new?
- Q4-2025 revenues at device, epiwafer and S.I. SiC substrate level. Updated forecast including 2030. Analysis on the supply chain GaN-on-SiC for defense and GaN-on-SiC for telecom. Analysis on Wafer size trends.
Product's objectives
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Quarterly update of the data
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Market forecast through 2030 in M$US for devices, wafers and epiwafers and units for wafers and epiwafers for RF GaN
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Market forecast breakdown by technology including discrete, MMIC and wafer type and size
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Market players at device, epiwafer and wafer level for RF GaN including SEDI, Wolfspeed, Qorvo, NXP, SICC, Coherent, Macom and from 2022 to present by M$US revenue
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Track supply chain & Fab capacity GaN-on-SiC and GaN-on-Si
Driven by defense and telecom infrastructure, the RF GaN market could reach $2.1B by 2030
Despite weak demand in the 5G telecom infrastructure sector in 2024 and 2025, we project the RF GaN market to reach $2.1B by 2030, driven by growth in defense and Satcom applications. As of 2025, two distinct dynamics are shaping the RF GaN industry. On one hand, SEDI and NXP are struggling with weak demand in the telecom infrastructure market and facing cost pressures on RF GaN-on-SiC technology, creating future potential opportunities for RF GaN-on-Si technology. On the other hand, Qorvo and MACOM are experiencing revenue growth, driven by increasing demand from defense and aerospace markets. MACOM’s agreement with HRL Laboratories to license and manufacture the 40-nm T3L GaN-on-SiC process technology strengthens its advanced GaN manufacturing capabilities and supports its positioning in both defense and select commercial applications, potentially contributing to incremental growth over the coming quarters. The recent merger between Skyworks and Qorvo can potentially enhance Qorvo’s scale and financial flexibility, potentially enabling greater investment in GaN R&D and manufacturing capacity, particularly for defense, aerospace, and next-generation infrastructure applications. Meanwhile, the dynamic power SiC market is reshaping the S.I SiC wafer ecosystem, intensifying competition, particularly from Chinese players.
Defense and aerospace drive GaN-on-SiC, while telecom momentum boosts GaN-on-Si opportunities.
While Qorvo and MACOM continue to benefit from the expanding defense and aerospace market, players such as SEDI, primarily focused on telecom infrastructure, are mitigating the market downturn through 5G rollout opportunities in Vietnam and the upgrade of existing 3G/4G base stations using GaN technology to improve energy efficiency. NXP may potentially consider exiting the RF GaN business due to weak market demand, although this will largely depend on the future of its Arizona GaN-on-SiC fabrication facility. We expect these dynamics to support modest growth in telecom infrastructure revenues over the coming quarters, driven by modernization of 5G base stations and 5G-Advanced deployments and, over the longer term, emerging 6G opportunities for both GaN-on-SiC and GaN-on-Si technologies.
About the authors
RF GaN Compound Semiconductor Market Monitor timeline and scope
- Definition of estimated market
- Open and captive market
- Applicative RF electronics market segments
2-page summary
GaN RF Monitor : changes since the previous quarter and what to look out for in the coming quarters
Compound semiconductor-based RF market comparative analysis
- RF devices as a function of power and frequency
- Technological requirements by application
- Device revenue market shares: GaN vs. Silicon
RF GaN market overview
- RF GaN market dynamics
- Open RF GaN epiwafer market dynamics
- RF GaN S.I. SiC wafer market dynamics
- RF GaN device revenue
- Open RF GaN epiwafer revenue
- Open + captive RF GaN epiwafer shipments
- Open RF GaN epiwafer shipments
- RF GaN S.I. SiC substrate revenue
- RF GaN S.I. SiC substrate shipments
- RF GaN epiwafer pricing
- RF GaN S.I. SiC substrate pricing
- Quarterly RF GaN device revenue
- Quarterly RF GaN epiwafer revenue
- Quarterly RF GaN S.I. SiC substrate revenue
RF GaN market forecasts
- RF GaN device revenue by segment
- RF GaN device market shares by segment
- Open RF GaN epiwafer revenue by segment
- Open RF GaN epiwafer market shares by segment
- RF GaN S.I. SiC substrate revenue by segment
- RF GaN S.I. SiC substrate market shares by segment
RF GaN technology
- RF GaN device market by device type
- RF GaN bare die market shares by device type
- RF GaN device revenue by technology platform ($M)
- S.I. SiC substrate development timeline
- RF GaN S.I. SiC substrate revenue by substrate size (by value)
- RF GaN S.I. SiC substrate volume by substrate size
- Open RF GaN epiwafer volume by substrate type
- Open RF GaN epiwafer revenue by substrate size
RF GaN market players
- Supply chain and business model
- Suppliers' capacity
- Sumitomo Electric Device Innovations (SEDI) - RF GaN device revenue
- Qorvo - RF GaN device revenue
- Wolfspeed - RF GaN device revenue
- RF GaN: Fab locations
- IQE - RF GaN epiwafer revenue
- Wolfspeed - RF GaN epiwafer revenue
- Wolfspeed – RF GaN S.I. SiC substrate revenue
- Coherent (renamed from II-VI) – RF GaN S.I. SiC substrate revenue
- SICC– RF GaN S.I. SiC substrate revenue
- Others – RF GaN activities
Terminology and definitions
- Acronyms
- Explanation and methodology
- Formulas used
- Terminology at substrate, epitaxy and device level
Yole Group Presentation