Technology, Process and Cost Comparison
BCD Technology Process Comparison 2025
In-depth comparative study on 73 BCD technology process, from the 37 major manufacturers including Infineon, STMicroelectronics, Texas Instruments, TSMC and SMIC.
SPR25920
Report objectives
This comparative report synthesizes the results of detailed physical, technical, supply chain of a selection of 15 BCDs. Moreover, a costing analyses of a more 70 BCDs technologies..
Key features :
- Detailed photos
- Precise measurements
- Die analysis
- Materials analysis
- Supply chain evaluation
- Manufacturing cost analysis
- Physical Comparisons
- Cost Comparisons of 64 technologies
What’s new?
- Four new companies
- Twelve new technologies
- Six foundry companies for fourteen technologies
- Focus on latest LDMOS innovation and Chinese actors.
This report presents an in-depth analysis of the latest innovations in Bipolar-CMOS-DMOS (BCD) devices. It shows the differences between 77 selected devices from Infineon, STMicroelectronics, Elmos, Bosch, NXP, Littlefuse, Texas Instruments, Analog Devices, Tower Semiconductor, onsemi, Intel, Denso, Renesas, Toyota, Toshiba, Mitsubishi, Rohm, TSMC, DB HiTeK, SMIC, Samsung, Microchip, Reed Semiconductor, Ablic, Nisshinbo (Ricoh, NJR), Butterfly, Tichtek, MPS, SemiMent, GTA Semiconductor, Qorvo, Broadcom, Xinlink, Halo microelectronics. The report covers all the major players in the market and their new technologies.
In this 2025 version, you will find:
More details on the LDMOS transistors, with more measurements.
o Focus on the evolution of the mature technologies
o four new manufacturers: Qorvo, Broadcom, Xinlink, Halo microelectronics.
o 13 new technologies, down to the 40nm lithographic node, and including high voltages.
o An update of the wafer cost calculation for the 64 technologies shown in this report’s 2024 version.
BCD has been developed to simplify the control of power devices by proposing a monolithic Integrated Circuit (IC) solution to integrate the gate driving circuit and current/temperature measurements to protect the power component in the same silicon IC.
The 2025 report shows the evolution of 4 technologies already present in the oldest versions. Infineon, Texas Instruments, STMicroelectronics, TSMC are evolving their technologies and design of their transistors. Some new technologies from Renesas, NXP, Analog Devices tower Semi, SMIC has been added. The technologies studied in this report have lithographic technology nodes ranging from 0.18µm to 40nm. The components range from monolithic piloted power transistors to microcontrollers with high-voltage analog inputs and outputs. 8 new slides on the evolution of technologies have been added in this report.
For each analyzed device, this report details the manufacturing process and materials used, the component design, and the technical choices. The cost report provides an estimation of the cost structure of the wafers using the various technologies, highlighting the influence of the technological innovations.
This report also offers a unique opportunity to understand the technology evolutions and the manufacturing cost of the major BCD manufacturers. It furnishes the basics for an optimal choice of components during design and integration.
In this report, Yole Group analyzes and compares products from the 24 main manufacturers, with a focus on technology evolution and a description of the cost impact of these innovations. Technical and cost comparisons of the main parameters, transistors, metal layers, isolation, and passives are all performed.
Overview
• Executive Summary
• Product Specification
• Reverse Costing Methodology
• Glossary
Supply Chain
• Supply Chain
• IDM
• Fabless - Foundry
Technologies Evolution
• Transistors
• Isolation
• Metal Layer Process
• Passives
• High Voltage
Foundry Technologies & Cost Analysis
• Infineon: BCD 130nm
• STMicroelectronics: BCD8
• STMicroelectronics – TSMC: BCD 40nm
• Renesas-IDT: BCD 0.13μm
• NXP: BCD 0.25μm
• Intel: BCD 65nm
• Texas Instruments: LBC9
• Texas Instruments: LBC9 - 300mm
• Analog Devices: BCD 0.18 μm
• Broadcom – TSMC: BCD 45nm
• Qorvo-Tower: TS18SOI
• Halo - SMIC: BCD 0.18μm
• Xlink – SMIC: BCD 0.13μm
• MPS – GTA Semiconductor: BCD 0.18μm
Comparison
• Cost & technology Comparison
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