Technology, Process and Cost Comparison

BCD Technologies Comparison 2026

This comparative report synthesizes the results of detailed physical, technical, supply chain of a selection of 11 BCDs. Moreover, a costing analyses of a more 88 BCDs technologies.

SPR26013

SCOPE

Analyzed devices:

  • Infineon
  • Melexis
  • X-Fab
  • Texas Instruments
  • NXP
  • GlobalFoundries
  • Cirrus
  • Apple
  • TSMC
  • Renesas
  • MPS
  • GTA Semiconductor
  • Novosense
  • HHGrace

PHYSICAL ANALYSIS

  • Detailed photos in optical and SEM views
  • Precise thickness measurements
  • Package opening
  • LDMOS delayering
  • Material identification

Technology

  • GlobalFoundries advanced node
  • Silicon and SOI substrate
  • LOCOS, STI, DTI insulation
  • MOSFET with field plate
  • BCD technology
  • Medium and high voltage IC

Type of Analysis

  • SEM View
  • TEM View
  • Floorplan
  • Cross section
  • Delayering
  • Optical View
  • X-ray View

MANUFACTURING PROCESS FLOW

  • Recreation of manufacturing process flow
  • Step by step process flow

Technical analysis

  • Component
  • Process
  • Wafer
  • Material

COST ANALYSIS

  • Supply chain evaluation
  • Simulation of device cost

Type of Analysis

  • Die cost
  • Raw wafer cost
  • Wafer Front-End cost

Report's Objectives

  • In-depth comparative study on 88 BCD technology processes, from the 40 major manufacturers including Infineon, STMicroelectronics, Texas Instruments, TSMC and SMIC.
  • Large catalog of BCD structures with technical details on the gate oxide, isolations, metal layers etc.

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