Technology, Process and Cost

EML 100G Telecom Laser Diode from Everbright

A comprehensive analysis of the EML laser die from Everbright found in the Huawei 800G CWDM optical transceiver, which features laterally coupled distributed-feedback (LC-DFB) structure and an Electro-Absorption Modulator.

SPR26067

SCOPE

  • Analyzed devices: Everbright EML laser for 100G telecom
  • From module/end system: Huawei OM3877FX200 800G CWDM  optical transceiver

PHYSICAL ANALYSIS

  • Detailed photos in optical and SEM views
  • Precise thickness measurements
  • Package opening
  • Material identification

Technology 

  • InP laser die
  • laterally coupled DFB laser
  • Electro-absorption modulator
  • Waveguide
  • AR and HR coating

Type of Analysis

  • SEM View
  • Floorplan
  • Cross section
  • FIB cross-section
  • Optical View

MANUFACTURING PROCESS FLOW

Recreation of manufacturing process flow

Technical analysis

  • Module​
  • Component​
  • Process​
  • Wafer​
  • Material​
     

COST ANALYSIS

  • Supply chain evaluation
  • Simulation of device cost
     

Type of Analysis

  • Die cost
  • Yields
  • Raw wafer cost
  • Wafer Front-End cost
  • Die cost
  • Dicing & Probe test cost
  • Final test cost

 

PRODUCT'S OBJECTIVES

  • Analyze the InP Electro-Modulated Laser diode die and its integration in the optical transceiver’s transmitter function.
  • Present main functions and technological solutions used in the laser die (grating for the DFB gain laser, the Electro-Absorption Modulator and the AR and HR coatings).

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