Technology, Process and Cost
EPC EPC2302 100V eGaN Power Transistor
By Yole SystemPlus —
A detailed physical and cost analysis of the EPC EPC2302 100V GaN Transistor
SPR23758
- Amkor Technology
- Efficient Power Conversion
- Episil Technologies Inc.
- GaN Systems Inc.
Key Features
- Detailed photos
- Cross-sectional analysis
- Delayering analysis
- Precise measurements
- Manufacturing process flows
- Manufacturing cost analysis
- Estimated selling price
- Physical comparison with two other 100V GaN HEMTs, EPC’s EPC2045 and GaN Systems Inc.’s GS6100B
Overview / Introduction
- Executive Summary
- Reverse Costing Methodology
- Glossary
Company Profile
Physical Analysis
- Summary
- Package Analysis
- Package View & Opening
- Package Cross-Section
- GaN HEMT Die Analysis
- Die Views & Dimensions
- Die Delayering
- Die Cross Section
Physical Comparison
- EPC2302 vs vs GaN Systems GS6100B vs EPC2045
Manufacturing Process Flow
- GaN HEMT Wafer Fab Unit
- GaN HEMT Wafer Process Flow
- Assembly Unit
Cost Analysis
- Main Steps of the Economic Analysis
- Yields Explanation and Hypotheses
- GaN HEMT Wafer & Die Cost
- Packaging Cost
- Component Cost
Selling Price
Feedback
Related Products
About Yole Group
Yole Intelligence expects the GaN power electronics device market to reach $1.6 billion by the year 2027. The adoption of GaN devices in various consumer fast-charging applications is driving the growth of this segment.
EPC is a leader in low voltage GaN High Electron Mobility Transistor (HEMT) solutions. The addition of the 100 V EPC2302 to its product portfolio gives designers choices for lower on-resistance and better figures of merit compared to previous generations of the device. The device is suited for industrial motor drive applications.
Yole SystemPlus provides a full reverse costing study of the GaN HEMT EPC2302.
This is a Quad Flat No-Lead (QFN) packaged device with a 100V breakdown voltage and 101A continuous drain current. Yole SystemPlus fully tears down the device, giving detailed overviews of the GaN HEMT’s physical parameters including die dimensions and epitaxy thickness.
This report also provides a technology overview, the manufacturing cost and selling price of the GaN device, as well as an estimated manufacturing cost of all the process steps.
The report includes a physical comparison of the device with two 100V GaN HEMTs, one from EPC, the EPC2045, and GaN Systems Inc, the GS6100B.
