Technology, Process and Cost Comparison
GaN-based Charger Comparison 2023
By Yole SystemPlus —
Technology and cost comparison of GaN transistors in GaN fast chargers, with a focus on Samsung solutions
SPR23720
- Amkor
- Apple
- Dell
- GaN Systems
- Lenovo
- Motorola
- Navitas
- Samsung
- STMicroelectronics
- TSMC
- Xiaomi
Overview / Introduction
- Executive Summary
- Reverse Costing Methodology
- Glossary
Technology & Market
Company Profile and Supply Chain
Physical Analysis
- Samsung EP-T4510 Power Adapter
- Lenovo GaN 100
- Motorola MC-1258
- Apple A2452
- Xiaomi MDY-136EU
- Dell Alienware LA240PM200
Physical Comparison
- GaN HEMTs
- Epitaxy vs Vds
- Transistor Pitch
- Current Density vs Voltage
- Gate-Drain Distance
- Figure of Merits
- Samsung Power Adapter Comparison
Manufacturing Process Flow
- Detailed only for STMicroelectronics
Cost Analysis
- Yield Explanation
- Yield Synthesis
- Cost Analysis Assumptions
- Wafer Cost and Die Cost Breakdown
Cost Comparison
- Epi-wafer Cost Breakdown
- Total Wafer Cost Breakdown
- Global Comparison – Component Cost
- Ampere Cost vs Die size
- Average Wafer Cost breakdown
- Samsung EP-T4510 & Samsung EP-TA845
- BOM Cost Comparison
Conclusion
Feedback
Related Products
Yole Group corporate presentation
Key Features
- Detailed photos
- Precise measurements
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Physical and cost comparison of GaN HEMTs
- Samsung 45W Si-based vs. GaN-based: bill of materials (BOM) analysis and cost comparison
What's new
- Different GaN transistors used in charging devices
- Analysis of chargers used by key smartphone players
- Detailed look into the BOM of Samsung’s 45 W Si vs. GaN-based chargers
A recent Yole Intelligence market report has shown the continued growth of the GaN power device market, as well as the adoption of these devices in various applications ranging from consumer electronics to automotive applications. According to Yole intelligence, the GaN power market is expected to reach $1.6 billion by the year 2027, and the adoption of GaN devices in various consumer fast-charging applications is driving the growth of this segment.
GaN devices with better operating frequency and a smaller footprint than comparable Si devices will offer the advantages of decreased charging time, weight, and size for mobile chargers. Various designs have been chosen for integrating GaN devices in mobile chargers. Some manufacturers have opted for a GaN device with an external driver, while others use an integrated device with the Si-driver co-packaged. The cost of these devices can vary depending on the design choices, and a look into various cost components can lead to varied improvements and more adoption of GaN technologies.
In this report, Yole SystemPlus presents an overview of the state-of-the-art of GaN power devices used in various chargers to highlight differences in GaN HEMT design and their impact on device size and production cost. Six different chargers, from Samsung, Lenovo, Motorola, Apple, Xiaomi, and Dell, with power ratings ranging from 45W - 240 W, have been chosen, and the GaN devices in these chargers have been analyzed. The GaN transistors have a 650 / 700 V voltage rating and are packaged as either a discrete power die, a system-on-chip, or a system-in-package device.
This report provides detailed optical and SEM pictures of the GaN transistor device’s packaging and structure, down to the microscopic level of the HEMT design. Also included is a BOM analysis of two 45 W Samsung fast chargers with Power integrations (Si based) and Navitas (GaN-based) dies . The estimated manufacturing cost of the analyzed GaN devices and their selling prices are presented as well, along with physical, technological, and manufacturing cost comparisons between the analyzed devices.
