Technology, Process and Cost Comparison
GaN Transistor Comparison 2022
By Yole SystemPlus —
Detailed technology and cost comparison of 34 GaN power devices from companies such as EPC, GaN Systems, Infineon, Innoscience Navitas, Nexperia Panasonic, PI, TI, STMicroelectronics, GaNPower International, and Transphorm.
- EPC
- GaN Systems
- GaNPower International
- Infineon
- Innoscience
- Navitas
- Nexperia
- Panasonic
- PI
- STMicroelectronics
- TI
- Transphorm
- TSMC
Key Features
- Detailed photos
- Precise measurements
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Estimated selling price
- Technology and cost comparisons for low voltage and medium voltage
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Recent market reports have shown the continued growth of the GaN power device market, as well as the adoption of these devices in various applications ranging from consumer electronics to automotive applications. The GaN power market is expected to reach $2 billion in 2027.
Being a relatively new technology compared to silicon, GaN device manufacturers propose different approaches to device design, integration, and packaging. Due to the technical difficulty in GaN epitaxy, most manufacturers outsource the various stages of device manufacturing, thereby changing the business models of GaN devices from the existing device manufacturing business models. Moreover, GaN business models are still very different.
Since their first commercialization in 2010, the performance and added value of GaN devices have been gradually proven, and prices have become increasingly acceptable to end-users. We have new major players like STMicroelectronics entering the market, and adoption of monolithic power GaN ICs in various mobile charges with a power rating up to 130 W and at affordable prices.
However, GaN devices still have some technical and commercial challenges. Technically, improvements are required in manufacturing yield and electrical performance. Commercially, there is need for large-volume market adoption driven by targeted applications (for instance, automotive) to further reduce the cost of GaN devices and favor GaN adoption on a large commercial scale.
In this report, Yole SystemPlus presents an overview of the state-of-the-art of GaN power devices to highlight differences in design and manufacturing processes and their impact on device size and production cost. This report analyzes 34 devices from 12 of the main suppliers.
This report also includes an estimated manufacturing cost of the analyzed GaN devices and their selling prices. Also provided are physical, technological, and manufacturing cost comparisons between the analyzed devices.
Overview / Introduction
- Executive Summary
- Reverse Costing Methodology
- Glossary
Technology & Market
Company Profile and Supply Chain
Physical Analysis
- EPC
- GaNPower
- Power Integrations
- STMicroelectronics
- Transphorm
Physical Comparison
- Epitaxy
- Transistor pitch
- Gate length
- Gate-Drain Distance
- Figure of Merits
- Current Density
Manufacturing Process Flow
- EPC
- Power Integrations
- STMicroelectronics
- Transphorm
Cost Analysis
- Yield Explanation
- Yield Synthesis
- Low voltage cost Analysis
- Medium Voltage Cost Analysis
Cost Comparison
- Global Comparison – Component cost
- Low Voltages Comparison
- 650 V Comparison
Conclusion
Feedback
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