Technology, Process and Cost

GE Aerospace’s 1200V SiC MOSFET Power Module

By Yole SystemPlus

Discover the optimized design choices of GE Aerospace for its Gen3 SiC MOSFET module with Power Overlay (POL) technology and a unique gate structure.


  • Detailed photos
  • Precise measurements
  • Materials analysis
  • Manufacturing process flow
  • Supply chain evaluation
  • Manufacturing cost analysis
  • Physical and cost comparisons of 1200V SiC dies from GE, Wolfspeed, and Rohm.
  • Physical comparison of 1200V SiC modules from GE, Wolfspeed, and StarPower.
  • Cost comparison of 1200V SiC modules from GE and StarPower.


  • Power Overlay (POL) technology from GE Aviation.
  • Unique gate design structure for the Gen3 SiC MOSFET that Yole SystemPlus has never have seen before from any other analyzed SiC MOSFET manufacturer.

Do you have an account?

Sign in to your account to access your services