GE Aerospace’s 1200V SiC MOSFET Power Module

Overview / Introduction                 

• Executive Summary
• Reverse Costing Methodology
• Glossary

Company Profile                 

Physical Analysis                 

• Summary
• Package Analysis
  • Module View & Opening
  • Package Cross-Section
• SiC MOSFET Die Analysis
  • Die Views & Dimensions
  • Die Delayering
  • Die Cross Section

Physical Comparison                 

• GE vs Wolfspeed vs Rohm 1200V SiC Dies
• GE vs Wolfspeed vs StarPower 1200V SiC Modules

Manufacturing Process Flow               

• SiC Wafer Fab Unit
• SiC Wafer Process Flow
• Assembly Unit
• Assembly Process Flow

Cost Analysis                 

• Main Steps of the Economic Analysis
• Yields Explanation and Hypotheses
• SiC MOSFET Die Cost
• AMB Substrate Cost
• Packaging Cost
• Module Cost

Cost Comparison                 

• GE vs Wolfspeed vs Rohm 1200V SiC Dies $/Ampere Comparison
• GE vs StarPower 1200V SiC Module.

Selling Price               

Feedback               

Related Products

About Yole Group               

KEY FEATURES:

• Detailed photos
• Precise measurements
• Materials analysis
• Manufacturing process flow
• Supply chain evaluation
• Manufacturing cost analysis
• Physical and cost comparisons of 1200V SiC dies from GE, Wolfspeed, and Rohm.
• Physical comparison of 1200V SiC modules from GE, Wolfspeed, and StarPower.
• Cost comparison of 1200V SiC modules from GE and StarPower.

WHAT'S NEW:

• Power Overlay (POL) technology from GE Aviation.
• Unique gate design structure for the Gen3 SiC MOSFET that Yole SystemPlus has never have seen before from any other analyzed SiC MOSFET manufacturer.

General Electric

Wolfspeed

ROHM Semiconductor

II-VI

The market outlook for SiC devices is promising. According to Yole Intelligence’s CS Monitor (Q2-2022), it is expected to grow from $1 B to $6 B for the period 2021 - 2027. Nevertheless, the technical panorama of SiC devices is still varied, and every manufacturer has its own solutions for die design and packaging integration. This leads to strong competition, which will accelerate technical innovation and lower prices.

Moreover, SiC business models are still very different. We are seeing (and will continue to see) a restructuring of the supply chain, driven by the main cost factors.

Since the commercialization of the first SiC device in 2001, the performance of SiC devices and the value that they add has gradually been proven. Device price has also become increasingly acceptable to end-users.

GE (General Electric) Aviation is a world-leading provider of jet and turboprop engines, as well as integrated systems for commercial, military, business, and general aviation aircraft. GE has been working on SiC technology development for nearly two decades, from chip design to system implementation.

The company currently offers a range of SiC power modules to its customers.

In this context, Yole SystemPlus provides a full reverse costing study of the GE 1200V SiC MOSFET Module “GE12047CCA3”.

This half-bridge power module integrates 1200V Gen3 SiC MOSFET dies from GE with 475A current rating.

This module uses Power Overlay (POL) technology from GE for its silicon nitride (SiN) AMB substrate design, and utilizes an AlSiC baseplate.

For its SiC MOSFET design, GE employs a unique gate design structure that Yole SystemPlus has never seen before amongst the many SiC MOSFETs we’ve analyzed.

Supported by a full teardown of the module, this report reveals GE’s technology choices for its assembled module as well as the designs of its POL substrate and SiC MOSFET.

This report also provides insights into technology data, manufacturing cost, and the selling price of the module, as well as an estimated manufacturing cost of all the module’s parts and a selling price analysis.

Included too is a physical and cost comparison between three 1200V SiC MOSFET dies from: GE, Wolfspeed, and Rohm Semiconductor. Finally, a physical comparison between three 1200V SiC Modules from GE, Wolfspeed, and StarPower, is presented as well as the cost comparison between GE and StarPower modules.