Technology, Process and Cost
GeneSiC 1200V Gen3 and 3300V Gen2 SiC MOSFETs
By Yole SystemPlus —
Discover the cost and technology choices of the first commercially available discrete3300V SiC MOSFET from GeneSiC.
Silicon carbide (SiC) devices are gaining the confidence of many customers and penetrating various applications. This is confirmed by the promising market outlook for SiC devices, which according to Yole Développement will reach a compound annual growth rate (CAGR) of 31% for the period 2020 – 2026.
Since the commercialization of the first SiC device in 2001, the performance and added value of SiC devices has been gradually proven and their price has become increasingly acceptable to end-users.
Despite the value they add, SiC transistors still have some technical and commercial challenges to face. For example, the complexity of some process steps of SiC wafer processing and the supply constraints that impact wafer price still hinder SiC adoption on a large commercial scale – especially for high voltage classes.
GeneSiC Semiconductor is a world leader in silicon carbide technology. Holding leading patents on wide band gap power device technologies, GeneSiC is one of the first companies to propose 3300V discrete-packaged SiC MOSFET on the market, by benefiting from the dynamic supply chain of SiC. Their exhaustive product catalog of discrete-packaged SiC MOSFETs entails components from 750V to 3300V.
In this context, System Plus Consulting presents a technology and cost analysis of two GeneSiC SiC MOSFET devices: G3R75MT12D (3rd generation, 1200V) and G2R1000MT33J (2nd generation, 3300V).
This report provides insights into the technology data, manufacturing cost, and selling price of both devices. Also included are wafer and die cost comparisons between 1200V SiC MOSFET devices from different players on the market.
Overview / Introduction
- Executive Summary
- Market
- Reverse Costing Methodology
- Glossary
Company Profile
- GeneSiC Company Profile
- Products Portfolio
Physical Analysis
- Synthesis of the Physical Analysis
- 1200V-Gen3 (G3R75MT12D)
- 3300V-Gen2 (G2R1000MT33J)
- Package Opening
- SiC MOSFET Die View & Dimensions
- SiC MOSFET Die Process
- SiC MOSFET Die Cross-Section
Physical Comparison
- GeneSiC SiC MOSFETs – Gen2 and Gen3 Comparison
Manufacturing Process
- SiC MOSFET Fab Unit
- SiC MOSFET Process Flow
- Packaging Fab Unit
- Packaging Process Flow
Cost Analysis
- Synthesis of the Cost Analysis
- Yields Explanation & Hypotheses
- 1200V-Gen3 (G3R75MT12D)
- 3300V-Gen2 (G2R1000MT33J)
- SiC MOSFET Front-End Cost
- SiC MOSFET Wafer Cost per Process Step
- SiC MOSFET Die Probe Test & Dicing
- SiC MOSFET Die Cost
- Packaging BOM & Assembly Cost
- Final Test & Component Cost
Cost Comparison
- 1200V SiC MOSFETs – Cost Comparison between SiC Manufacturers
Selling Price Analysis
- Estimated Selling Price for 1200V-Gen3 (G3R75MT12D) and 3300V-Gen2 (G2R1000MT33J)
Complete teardown with:
- Detailed optical and SEM photos
- Precise dimensional measurements
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost and selling price analysis
- Technology comparisons between GeneSiCSiC MOSFETs Gen2 and Gen3
- Wafer and die cost comparisons between 1200V SiC MOSFET devices from different players on the market.
