Technology, Process and Cost Comparison
Si IGBT Comparison 2022
By Yole SystemPlus —
Compare the technology and costs of 28 silicon Insulated Gate Bipolar Transistors from Sanken, Infineon, onsemi, STMicroelectronics, Mitsubishi Electric, Rohm, Fuji Electric, Littelfuse, WeEn Semiconductors, Micro Commercial Components, and Renesas.
KEY FEATURES:
- Detailed optical and SEM images
- Precise measurements
- Manufacturing process flow
- Company profiles and supply chain evaluation
- Manufacturing cost analysis
- Technology and physical comparisons including figure of merit, design, and current density
- Cost comparison of wafer, die, die cost per Ampere, including comparison of SiC vs IGBT
WHAT'S NEW:
- Eight new devices from seven players
- Four new players: Sanken, MCC, WeEn Semiconductors and Renesas
- Two new automotive-qualified devices.
- Fuji Electric
- Infineon
- Littelfuse
- MCC
- Mitsubishi Electric
- onsemi
- Renesas
- Rohm
- Sanken
- STMicroelectronics
- WeEn Semi
Silicon (Si) devices dominate the power electronics market. The IGBT market will be worth $9.3B by 2027, with a Compound Annual Growth Rate (CAGR) for 2021-2027 of 7.0%, according to Yole Intelligence.
Silicon Insulated Gate Bipolar Transistors (IGBTs) are still continually improving with the introduction to the market of new device designs. New and existing players are expanding their product portfolios and pursuing cost reductions through transitions to larger wafer size fab technology.
Si IGBT devices vary in terms of design choice. Manufacturers take different approaches to device design, depending on the targeted electrical performance and application. Field-Stop (FS) trench structures are the most common design for IGBTs.
In this report, Yole SystemPlus presents an overview of the state of the art of 28 Si IGBT transistors in two voltage classes, 600V/650V and 1200V. They highlight differences in design and manufacturing processes, and their impact on device size and production cost.
The report analyzes 28 IGBTs from eleven players: Sanken, Infineon, onsemi, STMicroelectronics, Mitsubishi Electric, Rohm, Fuji Electric, Littelfuse, WeEn Semiconductors, Micro Commercial Components (MCC) and Renesas. They target various power applications, including 7 AEC-Q101 qualified devices.
Compared to the 2021 report there are eight new devices from seven players, including four new players: Sanken, MCC, WeEn Semiconductors and Renesas. There are also two new automotive-qualified devices.
The report provides detailed optical and Scanning Electron Microscope (SEM) pictures from the device’s packaging down to the microscopic level of transistor design, with a focus on the latter. This detailed analysis is performed for eight IGBTs. For devices previously analyzed by Yole SystemPlus, please refer to the dedicated reports for the full technology analysis.
Yole SystemPlus perform cost simulations for all 28 IGBTs. We break down their estimated manufacturing costs and their selling prices. Finally, this report provides exhaustive physical, technology and manufacturing cost comparisons of the analyzed devices.
Overview / Introduction
- Executive summary
- Reverse costing methodology
- Glossary
Technology & Market
Company Profile
- Sanken
- Renesas
- MCC
- WeEn Semi
- Infineon
- onsemi
- Rohm
- STMicroelectronics
- Mitsubishi Electric
- Fuji Electric
- Littelfuse
Physical Analysis
- 650V IGBTs
- Renesas
- MCC
- WeEn
- Infineon
- onsemi
- Rohm
- 1200V IGBT
- Rohm
Technology and Physical Comparison
- Device performance comparisons (FOM, current density)
- Device design comparisons
- Physical parameters trends
Manufacturing Process Flow
- Supply chain of all analyzed manufacturers
- Wafer fabrication unit hypotheses for all analyzed manufacturers
- Manufacturing process flow schematics of selected IGBT processes
Cost and Price Analysis
- Yields explanation & hypotheses
- For each of the 28 IGBTs:
- Wafer cost
- Die cost
- Packaging cost (only for discrete packaging)
- Component cost
- Component price
Cost Comparison
- Comparisons include wafer, die costs, die Ampere costs for each voltage class
- SiC transistor vs Si IGBT current density & die Ampere cost comparison
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