Technology, Process and Cost Comparison

Intelligent Power Module Comparison 2025

Oct 2025

Comparison of six IPM solutions from Infineon, Onsemi, STMicroelectronics, and Texas Instruments – highlighting the emergence of SiC and GaN wide bandgap technologies and gate driver configurations

SPR25974

Report objectives:

Intelligent Power Module (IPM) are particularly interesting because they integrate both the power transistors and the control electronics within a single package. These modules are specifically designed to interconnect up to 15 components, optimizing electrical performance and thermal management at high voltages. IPMs have existed for more than 15 years, but recent developments are especially noteworthy with the introduction of wide bandgap power transistors.

This is the first time Yole Group has released a report dedicated to IPM, including gate drivers and other analog components to the power devices.

The report combines power devices in silicon and in wide bandgap (SiC, GaN). Different type of gate drivers' configurations have been found depending on the device to drive. It includes also the analysis and comparison of the IPM that Texas Instruments recently launched the first IPM featuring GaN HEMT technology. We have found also different type of substrates or substrates,.

Overall, IPMs represent an effective way to introduce wide bandgap devices into new markets, allowing system designers to benefit from advanced performance without requiring deep expertise in wide bandgap power electronics integration. Texas Instruments also developed a new high-side insulation strategy based on GaN dies.

Key Features:

Detailed photos
Precise measurements
Die analysis
Package analysis
Materials analysis
Manufacturing process flow
Supply chain evaluation
Manufacturing cost analysis
Physical Comparisons
Technical Comparisons
Cost Comparisons
Electrical architecture Comparison

Analyzed devices:

Six 3-phase inverter IPMs of four different manufacturers:

Infineon
- IM564 IGBT 600V
- IM828 SiC MOSFET 1200V
Onsemi
- FNA22512 IGBT 1200V
- NFAM3812 SiC MOSFET 1200V
STMicroelectronics
- STGIPQ8C60T IGBT 600V
Texas Instruments
- PDRV7308 GaN 600V

The arrival of Gallium Nitride (GaN) and Silicon Carbide (SiC) in Intelligent Power Modules (IPMs) represents a major step forward in power electronics. Those wide-bandgap semiconductors enable higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon devices. SiC is particularly suited for high-voltage and high-temperature applications, while GaN excels in high-frequency systems. Their integration allows IPMs to deliver higher power density and improved reliability in electric vehicles, renewable energy systems, and industrial drives. Ongoing innovation is rapidly accelerating adoption. Together, GaN and SiC are paving the way for smarter, smaller, and more efficient power modules of the future.

This report provides a comprehensive comparison of the architectures and packaging technologies used in intelligent power modules, analyzing current trends, design and material choices, manufacturing advancements, and cost competitiveness that are shaping the future of Intelligent Power Modules (IPMs).

Yole Group has analysed 600V and 1200V IPMs:

1200V: Infineon’s IM828 and onsemi’s NFAM3812, modules featuring SiC MOSFETs, as well as onsemi’s FNA22512, an IGBT-based IPM.

600V: Infineon’s IM564, STMicroelectronics’ STGIPQ8C60T, two IGBT modules, and the new Texas Instruments’ PDRV7308, a 650 V IPM integrating GaN HEMT technology.

The report presents detailed physical analyses of the packaging structures and semiconductor dies of all six modules. Particular attention is given to the architectural relationship between the gate drivers and power transistors, as well as to the insulation design separating the high-side and low-side of the three-phase inverters. Finally, cost simulations covering both die and package are performed to evaluate the total module manufacturing cost.

This report focuses on the Modules’ Packaging and gate driver dies. Therefore, the dies’ cost breakdown is not detailed and just the final die cost is imported in the module’s BOM cost. Only package BOM (Bill Of Material) and detailed assembly process steps cost for ceramic substrate and the full module are detailed. Yet, physical and technological parameters of the 6 power modules are detailed in the Excel file. Lastly, this report provides exhaustive physical, technology, and assembly cost comparisons of the six analyzed modules.