Technology, Process and Cost Comparison
LPDDR5(X) Comparison 2024
Comparison of leading edge 16Gb low power DRAM memory from high end smartphones using EUV and non EUV lithography manufacturing process.
SPR24707What's new?
- 1B technology node
- Higher memory density
- EUV lithography
Key Features:
- Detailed photos
- Precise measurements
- Die analysis
- Package analysis
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Physical Comparison
- Technical Comparisons
- Cost Comparison
Report objectives:
The purpose of the analysis was to compare the memory die density, cell features, wafer cost, and die cost of leading edge memory from Micron, Samsung, and SK hynix extracted from high end smartphones. Additionally, it examines Micron’s manufacturing process choices of non EUV lithography in comparison to EUV adoption by Samsung and SK hynix.
The DRAM market is recovering quickly, fueled by strong
demand from data centers. As a result, DRAM revenues are set to rise
significantly in 2024 and 2025. In 2024, the market is expected to grow by 88%
year-over-year, reaching $98 billion. This growth trend is anticipated to
continue through 2025.
The increase in DRAM for smartphones and PCs is driven by
higher DRAM content in systems, due to the rise of AI-enabled devices. To
support this growth, DRAM technology must scale to boost memory density and
lower costs. However, scaling has slowed down due to increasing manufacturing
complexity. Multi-patterning requirements are increasing with each node
migration, resulting in additional processing steps, therefore there is growing
need for new equipment, such as EUV machines, which are expensive but essential
for future development. Major DRAM manufacturers like Samsung, SK hynix, and
Micron are producing advanced DRAM generations 1𝛼 and 1β in high volumes,
but also face rising costs and manufacturing complexity.
LPDDR5X is designed to enhance performance and energy
efficiency in high-end smartphones, meeting the demands of AI-driven
applications with high bandwidth for real-time data processing. Faster data
transfer rates ensure smooth gaming and ability to run multiple applications at
the same time without a loss in speed. Optimizing silicon chip area allows for
more storage per silicon area by shrinking capacitor sizes. However, as
technology advances, patterning these small features has become more challenging.
Some manufacturers have adopted EUV lithography, which eliminates multiple
patterning, however this advanced method could add to the manufacturing cost
and needs high equipment investments. Samsung’s die density increased by
approximately 31% from their previous 1z technology, while the die size was
reduced by 22% in their 16Gb die.
This detailed reverse costing report provides optical and scanning electron microscope (SEM) images of leading edge LPDDR5(X) from high-end smartphones. The analysis includes X-ray images, package analysis, and high-resolution SEM Images of the DRAM capacitors. It covers Samsung’s LPDDR5X K3KL3L30, SK Hynix’s LPDDR5X H58G76BK8HX095, and Micron’s LPDDR5 MT62F1G64D4.The report compares the physical characteristics of the three components and includes a detailed cost analysis of the wafer front-end processing, single die cost and cost per Gigabit. The comparison highlights key technology similarities and differences, and their impact on DRAM pricing. Additionally, Micron’s 1B nm process technology node is compared to its competitor process.
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Overview
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Executive Summary
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Reverse Costing Methodology
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Glossary
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Company
Profile
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Samsung
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SK
Hynix
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Micron
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Market
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Physical Analysis
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Summary of the physical analysis
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Samsung K3KL3L30 LPDDR5X Memory Analysis
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SK Hynix H58G76BK8HX095 LPDDR5X Memory Analysis
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Micron MT62F1G64D4 LPDDR5 Memory Analysis
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Physical Comparison
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Manufacturing Process Flow Analysis
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Samsung/SK Hynix/Micron Die Front-End Process
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Samsung/SK Hynix/Micron Die Front-End Wafer
Fabrication Unit
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Cost Analysis
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Cost Summary
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Yields Explanation & Hypotheses
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Samsung/SK Hynix/Micron
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Memory Front-End Wafer Cost
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Memory Die Cost
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Packaging Cost
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Component Cost
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Cost Comparison
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Selling Price
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Definitions of Price
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Estimated Selling Price
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Feedbacks
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Related Products
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