Technology, Process and Cost Comparison

Power SiC Transistor Comparison 2026

May 2026

Technology and cost comparison of 5 SiC MOSFETs amongst a roadmap of 65 SiC Transistors from worldwide players, covering all the main SiC voltage ranges - specific highlights on Chinese SiC supply chain in this version !

SPR26999

SCOPE

Analyzed devices

MCC SICW040N120H4
BYD BSKE160S120
Navitas G4R12MT12K
Central Semi (AEM) CDMS24740-170
CETC WM2V080170L

From module/end system

PHYSICAL ANALYSIS

Detailed photos in optical and SEM views
Precise thickness measurements
Package opening
Die delayering and cross-section
Material identification

Technology

Planar / Trench / Trench-Assisted SiC MOSFET
Technology and Physical Comparison: Generation evolution and parameters trends (epitaxy, pitch…)
Device performance comparisons (Rdson*Qg, Rdson*Area, current density). Device design comparisons

Type of Analysis

SEM View
Cross section
Delayering
Optical View

MANUFACTURING PROCESS FLOW

Supply chain of all analyzed players
Wafer fabrication unit hypotheses for all analyzed players
Manufacturing process flow schematics of 1 example of SiC process

Technical analysis

Wafer
Die
Material
Packaging

COST ANALYSIS

Supply chain evaluation
Yields explanation & hypotheses
Exhaustive technology & Cost comparisons

Type of Analysis

Yields explanation & hypotheses
For each of the 5 newly-added SiC MOSFETs:
Epi-wafer and FE wafer cost breakdown
Die cost breakdown
Packaging cost breakdown
Component cost breakdown
Component price estimation

Report’s objectives

Provide a technology overview of worldwide SiC Transistor players: exhaustive roadmap of 65 SiC Transistors from 24 SiC market players from all over the world with specific highlights on Chinese SiC supply chain. These devices are covering all the main available voltage classes: 650/750V, 900V/1000V, 1200V, 1700V, 2000V, and 3300V. Also available upon specific custom request beyond the report content, an 8-inch manufacturing cost model for wafer and die.
Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of MOSFET design – with a focus on the latter.
Provide exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.
Physical and cost analysis is only shown for the 5 newly added MOSFETs (for devices previously analyzed by Yole Group, please refer to the related reports previously published by Yole Group). Moreover, the physical and technological parameters of all 65 SiC Transistors are detailed in an Excel file.

The Power SiC device market will be around $11B by 2031, according to the Power SiC/GaN Market Monitor 2026. The SiC ecosystem has been reshaped by leading market players in recent years, fostering intense competition focused on technical innovation and cost reduction. While some SiC business models differ, trends such as vertical integration are emerging to maximize future revenues. This restructuring of the supply chain is driven by key cost factors. Since the first SiC device was commercialized in 2001, these devices have consistently demonstrated their performance and value, with prices becoming increasingly acceptable to end users.

In this report, Yole Group presents an overview of the state-of-the-art SiC MOSFETs, with a detailed analysis of 5 newly added SiC MOSFETs compared to the latest 2025 report version. These 5 devices come from 5 players from all over the world with specific highlights on Chinese SiC supply chain: MCC, BYD, Navitas, Central Semiconductor (AEM), and CETC.

These 5 devices are included in Yole Group's exhaustive roadmap, built since the first comparison report in 2016, covering 65 SiC transistors from 24 SiC market players worldwide. The main physical and electrical parameters are detailed in the accompanying Excel file. We cover all major available voltage classes: 650/750V, 900V/1000V, 1200V, 1700V, 2000V, and 3300V. Also available upon specific custom request beyond the report content, an 8-inch manufacturing cost model for wafer and die.

This report provides optical and scanning electron microscope (SEM) images of the opened device packages, down to the microscopic level of MOSFET design—with a focus on the latter. This physical analysis is shown for the 5 newly added MOSFETs (for devices previously analyzed by Yole Group, please refer to the related reports previously published). Moreover, the physical and technological parameters of all 65 SiC transistors are detailed in the Excel file.

Yole Group has performed cost simulations only for the 5 newly added MOSFETs. We break down their estimated manufacturing costs and selling prices. Discrete-packaged devices are fully cost-simulated (wafer, die, and package costs). Our new collection of reports, “SiC Performance Comparison,” offers an exhaustive performance comparison of SiC discretes and modules tested under identical test conditions (link to our performance reports).

Lastly, this report provides exhaustive physical, technological, and manufacturing cost comparisons of the analyzed devices.

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Power SiC Transistor Comparison 2026

Technology and cost comparison of 5 SiC MOSFETs amongst a roadmap of 65 SiC Transistors from worldwide players, covering all the main SiC voltage ranges - specific highlights on Chinese SiC supply chain in this version !