Qorvo QM7810X 5G Sub-6 L-PAMiD with Rx Diversity

In 2020, with Broadcom already positioned, Qorvo managed to integrate within the Samsung’ supply chain for several versions of the latest Samsung Galaxy S series: 21 and 21+. For the first time, this smartphone features the QM78103 and the QM78105, both 5G low-noise-power amplifier module integrated duplexers (L-PAMiD) with receiver diversity (Rx Div.). This technology features several dies: power amplifier (PA), silicon-on-insulator (SOI) switch, and solidly mounted resonator (SMR) filters. The implemented filters are based on two different generations from Qorvo. The first still uses Qorvo’s CuFlip chip-scale packaging (CSP) technology with a shaped polymer cavity enabling cell protection and scandium-doped aluminum nitride (AlScN) as a piezoelectric material. The second filter uses the innovative MicroBAW technology, enabling higher resonator density and better cost effectiveness.

The uses of the QM78103 and QM78105 depend on the smartphone region. The main differentiation between these two are the integrated filters. Both are analyzed in this report, and the similitude and differences are exposed to explain the supplier’s technical choices.

For this special version, Qorvo innovates on several points. Thanks to dual side-molding BGA technology, the density of the packaging has growth and the critical dies (master switches, power management IC (PMIC) and low-noise amplifier (LNA)) have been completely isolated from the filtering part. For the EMI management, following its pairs a compartmental shielding using silver wire bond is used. Finally, with the latest SMR filter technology using a new level of wafer-level packaging and a new resonator shape, the footprint of the filters has drastically decreased compared to the last generation. Thanks to all of these innovations, Qorvo has managed to deliver a miniaturized package despite the 5G complexity.

This report contains a complete analysis of the FEM SiP, including a detailed analysis of the PA, the switches, the LNA, the filtering dies, and the internal/external EMI shielding. Also featured is a cost analysis and a price estimation of the component. Lastly, we integrate a comparison between the QM78105 in the S21 Ultra 5G, and the QM78103 in the S21+ 5G.

Overview/Introduction

Qorvo Company Profile

Samsung Galaxy S21 Series – Teardown

Market Analysis

Physical Analysis

• Physical Analysis Methodology
• Package
  • View and Dimensions
  • Package Opening:

Power amplifier, Switch, RF IC, Filters

• Block Diagram Estimation
• Package Cross-Section:

Overview, Dimensions, Substrate, Internal and External Shielding

• Package – Physical Data Summary
• Power Amplifier, Switch, LNA Dies
  • Views, Dimensions, and Markings
  • Die Overview and Cross-Section
• Filter Dies
  • Views, Dimensions, Opening, and Markings
  • Die Overview:

Substrate, Resonators

• Die Cross-Section

SMR Structure, Bumps

• Filter – Physical Data Summary

Manufacturing Process Flow

• LNA, Switch Die Process
• LNA, Switch Wafer Fabrication Unit
• PA Wafer Fabrication Unit
• PA Process Flow
• Filter Wafer Fabrication Unit
• Filter Process Flow
• Packaging Process Flow

Cost Analysis

• Cost Analysis Overview
• Main Steps Used in the Economic Analysis
• Yield Hypotheses
• PA Die Cost
  • PA Wafer Front-End Cost per Process Step
  • Wafer and Die Cost
• Switch, LNA Die Cost
  • Front-End (FE) Cost
  • Wafer and Die Cost
• Filter Die Cost
  • Filter Wafer Front-End Cost per Process Step
  • Wafer and Die Cost
• Packaging Cost
• Module Cost

Estimated Price Analysis

Comparison between QM78105 and QM78103

Comparison with Broadcom’s and Skyworks’ FBAR-BAW filter

Complete teardown with:

• Detailed photos
• Precise measurements
• Materials analysis
• Manufacturing process flow
• Supply chain evaluation
• Manufacturing cost analysis
• Technical and cost comparison between the QM78103 and QM78105
• Die and packaging comparison with Broadcom’s and Skyworks’ FBAR-BAW technology