Technology, Process and Cost
ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 Module
By Yole SystemPlus —
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module. 
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
Overview / Introduction
Company profile & Supply Chain
Physical Analysis
- Synthesis of the Physical Analysis
- Package Analysis
- View, dimensions and marking
- Housing
- Base plate cross-section
- DBC cross-section
- MOSFET Analysis
- Dimension
- Die process
- Die cross-section
- SBD Diode Analysis
- Dimension
- Die process
- Die cross-section
- Comparison between Rohm’s
Manufacturing Process Flow
- Overview
- MOSFET and Diode Process Flow
- Package Process Flow
- Description of Wafer Fabrication Units
Cost Analysis
- Synthesis of the Cost Analysis
- Main Steps of Economic Analysis
- Yields Explanation
- MOSFET Cost Analysis
- Wafer cost hypothesis
- MOSFET wafer cost
- Breakdown by process step
- MOSFET probe cost
- MOSFET die cost
- Cost Analysis Diode
- Cost Analysis BSM180D12P3C007
- Assessing BOM
- DBC cost
- BSM180D12P3C007
Comparison between BSM180D12P3C007 and CAS120M12BM2
- Module / MOSFET / Diode
- Cost
Estimated Manufacturer Price Analysis
- Manufacturers’ ratios
- Estimated manufacturer price
REVERSE COSTING WITH
- Detailed Photos
- Precise Measurements
- Material Analysis
- Manufacturing Process Flow
- Supply Chain Evaluation
- Manufacturing Cost Analysis
- Estimated Sales Price
- Comparison between Rohm’s planar and trench SiC MOSFETs
- Comparison between Rohm’s and Cree’s 1200V MOSFET modules