Technology, Process and Cost
STMicroelectronics SiC MOSFET 3rd Generation (Automotive-Grade)
By Yole SystemPlus —
Discover the most advanced generation of STMicroelectronics’ SiC MOSFET, featuring the smallest transistor pitch among the company’s SiC generations.
- Detailed photos
- Precise measurements
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Physical comparison: STMicroelectronics’ SiC MOSFET generation evolution: 1, 2, and 3
- Physical and cost comparisons of STMicroelectronics’ Gen 2 vs. Gen 3 650V devices
- Latest generation of SiC MOSFET from STMicroelectronics
- Smallest transistor pitch for an STMicroelectronics‘ SiC MOSFET generation
The market outlook for SiC devices is promising. According to Yole Intelligence’s Compound Semiconductor Monitor (Q2-2022), it is expected to grow from $1B to $6B for the period 2021 - 2027.
Nevertheless, the technical panorama of SiC devices is still varied, and every manufacturer has its own solutions for die design and packaging integration. This leads to strong competition which will accelerate technical innovation and lower prices.
Moreover, SiC business models are still very different. We are seeing (and will continue to see) a restructuring of the supply chain, driven by the main cost factors.
Since the commercialization of the first SiC device in 2001, the performance of SiC devices and the value that they add has gradually been proven. Device price has also become increasingly acceptable to end-users.
At the end of 2021, STMicroelectronics introduced the 3rd generation of its SiC MOSFETs. For this generation, STMicroelectronics further reduced the transistor pitch compared to previous generations.
In this context, Yole SystemPlus provides a full reverse costing study of the automotive-grade AEC-Q101 Gen3 SiC MOSFET from STMicroelectronics: SCT040H65G3AG.
It is a discrete-packaged SiC power MOSFET of 650V breakdown voltage and 55 mOhm maximum on-resistance.
Supported by a full teardown of the component, this report reveals STMicroelectronics’ technology choices for its Gen3 SiC die, as well as the assembly of the die in the discrete package.
This report also provides insights into technology data, manufacturing cost, and selling price of the component, as well as an estimated manufacturing cost of all the component’s parts.
Included too is a physical comparison between STMicroelectronics’ generations 1, 2, and 3. Also, a physical comparison between 650V Gen2 and Gen3 dies is presented.
Last but not least, we provide technology, wafer, and die cost comparisons focused on two STMicroelectronics 650V devices (Gen2 vs. Gen3).
Overview / Introduction
- Executive Summary
- Reverse Costing Methodology
- Package Analysis
- Package View & Opening
- Package Cross-Section
- SiC MOSFET Die Analysis
- Die Views & Dimensions
- Die Delayering
- Die Cross Section
- STMicroelectronics SiC MOSFET Generation Evolution
- STMicroelectronics 650V devices: GEN2 vs GEN3 Comparison
Manufacturing Process Flow
- SiC Wafer Fab Unit
- SiC Wafer Process Flow
- Assembly Unit
- Assembly Process Flow
- Main Steps of the Economic Analysis
- Yields Explanation and Hypotheses
- SiC MOSFET Die Cost
- Packaging Cost
- Component Cost
- Example of Gen 2 vs Gen 3 650V devices cost comparison
About Yole Group
Do you have an account?
Sign in to your account to access your services