Technology, Process and Cost Comparison
Superjunction MOSFET Comparison 2022
By Yole SystemPlus —
Comparison of the technology and cost of 29 superjunction MOSFETs from Infineon, Vishay, STMicroelectronics, Central Semiconductor, onsemi, D3 Semiconductor, Rohm and Toshiba.
According to Yole Intelligence, discrete power component market value will increase with a Compound Annual Growth Rate (CAGR) of 3.3 % for the 2021–2027 period, exceeding $17B. However, they forecast increased adoption of wide bandgap devices and a reduction in the market share of discrete silicon (Si) MOSFET power devices for the period. Yet, manufacturers continue to improve Si devices for better performance in target applications.
In this report, Yole SystemPlus presents 29 Si superjunction transistors. It highlights differences in the design and manufacturing processes, and their impact on device size and production cost. Except for Toshiba, all manufacturers use the trench multiple epitaxy process in the design of the superjunction structure. Toshiba still uses the deep trench process for the superjunction formation in its latest DTMOSVI design.
The report analyzes 29 superjunction MOSFETs from Infineon, Vishay, STMicroelectronics, Central Semiconductor, onsemi, D3 Semiconductor, Rohm and Toshiba. They target various power applications and two automotive AEC-Q101 qualified devices are also included. This report adds eleven new devices compared to Yole SystemPlus’ previous report on superjunction device comparison.
The report provides detailed optical and Scanning Electron Microscope (SEM) pictures from the devices’ packaging down to the microscopic level of transistor design for the eleven new devices. However, physical parameters and technology comparison of all the 29 devices are detailed in this report. The manufacturing process flow is also described in this report. For devices previously analyzed by Yole SystemPlus, please refer to the dedicated reports for the full physical analyses.
Yole SystemPlus performs cost simulations for all eleven superjunction devices. We break down their estimated manufacturing costs and their selling prices. Finally, this report provides exhaustive physical, technology and manufacturing cost comparisons of the analyzed devices.
- Central Semiconductor
- D3 Semiconductor
- Infineon
- onsemi
- Rohm
- STMicroelectronics
- Toshiba
- Vishay
Key Features
- Detailed photos
- Precise measurements
- Material analysis
- Manufacturing process flow of selected technology
- Supply chain evaluation
- Wafer and manufacturing cost analysis
- Comparison of technology design choices, electrical parameters, figures of merit and current density
- Comparisons of wafer cost, die cost and die cost per Ampere
What's new
- Compared to the Yole SystemPlus report, “GaN on Si HEMT vs SJ MOSFETs Comparison 2019”, this report focuses exclusively on 29 superjunction MOSFET with cost analysis of 11 new devices.
Overview / Introduction
- Executive summary
- Reverse costing methodology
- Glossary
Technology & Market
Company Profile
- Infineon
- Vishay
- STMicroelectronics
- Central Semiconductor
- onsemi
- D3 Semiconductor
- Rohm
- Toshiba
Physical Analysis
- 600V
- Infineon
- onsemi
- 650V
- Infineon
- onsemi
- Rohm
- Toshiba
Technology and Physical Comparison
- Device performance comparisons (FOM, current density)
- Toshiba DTMOS IV, V & VI
- Infineon 650V CoolMOSTM CFD7A vs CFD7
Manufacturing Process Flow
- Supply chain of all analyzed manufacturers
- Wafer fabrication unit hypotheses for all analyzed manufacturers
- Manufacturing process flow schematics of selected SJ processes
Cost and Price Analysis
- Yields explanation & hypotheses
- For each of the newly added 11 SJ MOSFETs
- Wafer cost
- Die cost
- Packaging cost
- Component cost
- Component price
Cost Comparison
- Comparisons include wafer, die costs, die Ampere costs for each voltage class
- Total wafer cost breakdown analysis
Feedbacks
Related Products
Yole SystemPlus Services