Technology, Process and Cost
TIA die from Huawei 800G
Analysis of the TIA die in the Huawei/Hisilicon 800G CWDM optical transceiver, which features Silicon Germanium Hetero-junction Bipolar Transistor and tungsten pillars.
SPR26060SCOPE
Analyzed devices
Huawei/Hisilicon TIA die
From module/end system
- Huawei/Hisilicon OM3877FX200
- CWDM 800G optical transceiver
PHYSICAL ANALYSIS
Gain a comprehensive understanding of the device through advanced optical and SEM analysis, including detailed imaging, thickness measurements, package opening, material identification and light pathway investigation.
Technology
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SMIC
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Huawei/Hisilicon SiGe BiCMOS
Type of Analysis
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SEM View
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Floorplan
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Cross section
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Optical View
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Infrared View
MANUFACTURING PROCESS FLOW
Technical analysis
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Module disassembly
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Component
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Process
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Wafer
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Material
COST ANALYSIS
Understand the value chain through supply chain evaluation and detailed device cost simulation.
Type of Analysis
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Die cost
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Yields
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Package assemble cost
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Raw wafer cost
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Wafer Front-End cost
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Die cost
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Dicing & Probe test cost
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Package assemble cost
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Final test cost
Report's objectives
- Analyze the TIA die and its integration in the optical transceiver.
- Present main functions and technological solutions used in the TIA die. (SiGe HBT transistor, tungsten deep pillar)
The datacenter optical transceiver market is experiencing strong growth with a CAGR estimated at 15% by Yole Group (driven by the rapid expansion of AI workloads, cloud computing, and high-performance networking infrastructure (Optical Transceivers for Datacom and Telecom 2026). As hyperscale datacenters demand higher bandwidth and lower latency, the industry is accelerating the transition from 400G to 800G optical transceivers. This shift enables significantly higher data throughput while improving power efficiency and reducing cost per transmitted bit. The adoption of 800G solutions is expected to become a major growth engine over the next few years, particularly in AI clusters and next-generation Ethernet architectures.
This full reverse costing study has been conducted to provide insight on technology data, manufacturing cost, and selling price of the TIA die of the Huawei 800G optical transceiver.
The TIA die reads and amplifies the signals of the 4 photodiodes of the photonic die. Built using SMIC’s 180nm SiGe BiCMOS technology, it offers a high-performance solution.
A complete physical teardown was performed, incorporating scanning electron microscopy (SEM), cross-sectional imaging, and energy-dispersive X-ray spectroscopy (EDX) to identify materials and unveil the technical specifications of the transceiver’s critical elements.
The report provides valuable insights into Huawei/Hisilicon’s design and technology choices for this TIA SiGe BiCMOS die. Additional subsystems including electronic, optical, and mechanical housing components are also analyzed in the report SPTT26004. The study further details the optical interface and assembly workflows. Finally, a comprehensive cost estimation for the assembly of both optical and electronic modules is presented.
- Executive Summary
- Main Features
- Reverse Costing Methodology
- Glossary
- Huawei
- Hisilicon
- SMIC
- Supply Chain
- Huawei 800G CWDM Optical Transceiver
- Views and Dimensions of the System
- TIA Die
- Die Overview
- Die Delayering
- Die Cross-Section
- SMIC
- TIA die
- SMIC Wafer Cost
- Die Cost
- Estimation of the Manufacturer Price
Huawei, Hisilicon, SMIC