Technology, Process and Cost

UNT 1200V SiC Power Module

Yole Group reveals for the first time in the industry the key deep-dive analysis of the UNT 1200V SiC power module with proprietary 8-inch SiC dies

SPR26981

Key features:

  • Physical Analysis of the module packaging in detail (opening, optical and SEM cross-section, material EDX analysis)

  • Physical Analysis of the UNT SiC MOSFET (delayering, optical and SEM cross-section, material EDX analysis)

  • Detailed manufacturing process step-by-step (from die Front-End wafer up to the module Back-End packaging)

  • Cost analysis: Epi-wafer and FE wafer cost breakdown, Die cost breakdown, Packaging cost breakdown, module cost breakdown, and price estimation

Product objectives:

  • Provide a comprehensive reverse costing study of the UNT 1200V SiC power module. 
  • Provide exhaustive physical and technology analysis (Optical and scanning electron microscope (SEM) images with EDX material analysis) from the module’s opened package, down to the microscopic level of MOSFET design.
  • Analyze UNT packaging innovations for this platform. This includes UNT’s innovative technology choices for attaching its SiC dies on the ceramic substrate and how they are interconnected between one another.
  • Provide for the first time a detailed analysis of the design of the UNT proprietary SiC MOSFET chip produced on 8inch SiC wafers.
  • Provide detailed manufacturing process step-by-step (from die Front-End wafer up to the module Back-End packaging)
  • Provide an exhaustive cost analysis based on SiC 8-inch cost model: Epi-wafer and FE wafer cost breakdown, Die cost breakdown, Packaging cost breakdown, module on cooler cost breakdown, and price estimation with a detailed Yield model for each process cost sequence (Wafer, die, packaging)

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