The evolving landscape of SiC and GaN markets

By Roberto Frazzoli for Power Electronics News

With power management becoming a fundamental aspect of emerging electronics applications such as vehicle electrification and AI data centers, wide-bandgap compound semiconductors such as silicon carbide and gallium nitride are the subject of strong industry dynamics.

In this article, we will briefly summarize some of the recent events and trends that have contributed to shaping the evolving SiC and GaN landscape, considering integrated device manufacturers (IDMs), fabless players, and foundries. As for GaN, we will consider only power applications, excluding RF applications.

According to Yole Group’s analysts, power SiC market growth continues to be driven mainly by automotive applications (Figure 1), especially inverters for battery-electric vehicles (BEVs).

According to Yole Group’s analysts, power SiC market growth continues to be driven mainly by automotive applications (Figure 1), especially inverters for battery-electric vehicles (BEVs).

Consistent with Yole’s forecast, industry news suggests that EV charging will continue to be a key driver for the power SiC market, with fast charging speed becoming a fundamental competitive edge for carmakers. In March 2025, Chinese leading EV maker BYD launched its Super e-Platform, achieving a charging power of 1 MW and a peak charging speed of just five minutes for 400 km (250 miles) of range. BYD develops and manufactures its SiC devices internally through its semiconductor division.

Despite the overall positive market trend, the recent EV market slowdown and increased competition from Chinese SiC device manufacturers had a significant impact on the market landscape around mid-2025.

U.S.-based SiC wafer producer Wolfspeed filed for bankruptcy protection in June, prompting its customer Renesas to withdraw from the SiC market. Japanese SiC player JS Foundry also filed for bankruptcy in July. As of September 2025, Wolfspeed exited Chapter 11 bankruptcy and is now restructuring.

The global SiC industry is currently transitioning from 150-mm (6-inch) wafers to 200-mm (8-inch) wafers.

Wolfspeed, for example, announced the launch of its 200-mm SiC wafers in September 2025. Infineon Technologies released the first products based on its 200-mm SiC technology to customers in Q1 2025, from its fab in Villach, Austria, and the transition at the company’s manufacturing site in Kulim, Malaysia, is on track.

In October 2025, Mitsubishi Electric announced the completion of its new 8-inch SiC facility in Kikuchi, Kumamoto Prefecture, Japan.

Other companies dealing with this transition to 200 mm include Bosch, which—among other sites—will carry out its 200-mm SiC production in Roseville, California, in a former TSI Semiconductors plant that it acquired in 2023.

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Source: www.powerelectronicsnews.com