Tradeshows & Conferences
IEDM – 14th MRAM Global Innovation Forum
This is a one-day forum organized the day following IEDM. The Forum will consist of 11 invited talks from leading experts, and a panel discussion (see below). Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, SOT-MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 14th edition of the series.
Yole Group will be part of the speakers with:
Senior Technology and Market Analyst – Memory,
Yole Intelligence part of Yole GRoup
New technologies beyond existing STT-MRAM and benefits in the market place
December 8th, 5pm – 6pm
Full program and more info: HERE
Simone Bertolazzi, PhD
Principal Analyst, Memory
Simone Bertolazzi, PhD is Principal Analyst, Memory at Yole Group.
As member of the Yole Group’s Memory team, he contributes on a day-to-day basis to the analysis of markets and technologies, their related materials, device architectures and fabrication processes.
Previously, Simone carried out experimental research in the field of nanoscience and nanotechnology, focusing on emerging semiconducting materials and their opto-electronic device applications. He (co-) authored more than 20 papers in scientific journals and was awarded the prestigious Marie Curie Intra-European Fellowship.
Simone obtained a PhD in physics in 2015 from École Polytechnique Fédérale de Lausanne (Switzerland), where he developed novel flash memory cells based on heterostructures of two-dimensional materials and high-κ dielectrics. Simone earned a double M. A. Sc. degree from Polytechnique de Montréal (Canada) and Politecnico di Milano (Italy), graduating cum laude.