Tradeshows & Conferences
ISES CHINASign in for replay
Connecting Leaders Within the Semiconductor Eco-system
These global events and conferences for the semiconductor manufacturing and supply industry, bring together political, business, financial, research and industry leaders and decision makers all under one roof. ISES China offers opportunities to engage with political, business, financial, research and industry leaders of the semiconductor manufacturing industry.
Yole Group will be part of program with:
Principal Analyst – Memory
Yole Intelligence part of Yole Group
Theme: Chiplet Leading the Change in the Next Chip Ecosystem
Session: Market Research
16:45 – 17:05: Memory and Processors for Chiplet Designs
The rise of generative AI applications and high-performance computing (HPC) in data centers has boosted demand for high-speed memory and computing devices with low-latency interfaces. In this context, heterogeneous integration and chiplet architectures enabled by advanced packaging approaches (e.g., hybrid bonding) are being regarded as the most promising solutions to address the memory-bandwidth bottleneck and increase the performance of computing systems via a tight integration of logic and memory functions.
This talk will provide an overview on the interplay between memory and processors in terms of technology and markets trends, describing the main solutions, the challenges, and the opportunities ahead for semiconductor players.
Simone Bertolazzi, PhD
Principal Analyst, Memory
Simone Bertolazzi, PhD is Principal Analyst, Memory at Yole Group.
As member of the Yole Group’s Memory team, he contributes on a day-to-day basis to the analysis of markets and technologies, their related materials, device architectures and fabrication processes.
Previously, Simone carried out experimental research in the field of nanoscience and nanotechnology, focusing on emerging semiconducting materials and their opto-electronic device applications. He (co-) authored more than 20 papers in scientific journals and was awarded the prestigious Marie Curie Intra-European Fellowship.
Simone obtained a PhD in physics in 2015 from École Polytechnique Fédérale de Lausanne (Switzerland), where he developed novel flash memory cells based on heterostructures of two-dimensional materials and high-κ dielectrics. Simone earned a double M. A. Sc. degree from Polytechnique de Montréal (Canada) and Politecnico di Milano (Italy), graduating cum laude.