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Epitaxy and ALD market to rise to more than a billion dollar – Webcast

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Epitaxy and ALD equipment are crucial enablers for the surging compound semiconductor markets such as GaN, SiC, MicroLED and VCSEL market

In the innovation race to add more functionalities into our everyday devices using the More-than-Moore (MtM) approach, the Power-Performance-Area-Cost (PPAC) factor is improved not only by scaling but also by using non-Si materials and by heterogeneously integrating them to one another. In this regard, Si, along with non-classical substrates such as GaAs, GaN, SiC, and InP, is growing at significant Compound Annual Growth Rates (CAGRs). However, this requires special deposition techniques for bulk materials growth (such as epilayers or seed layers) and thin layers (such as nucleation layers or passivation layers). In this context, epitaxy equipment (such as MOCVD, HTCVD and MBE) and atomic layer deposition (ALD) equipment are indispensable for MtM market.

Epitaxy equipment market driven by power GaN, power SiC, VCSEL and microLED is expected to increase by a factor of 1.58 X and reach 1.1B$ by 2026. Though MOCVD represents the biggest market size, HTCVD provides the key growth opportunity. It is also intriguing to see that China is the major driver for such equipment, where an overcapacity build-up might be happening.

ALD equipment market almost doubles, growing from $345M in 2020 to $680M in 2026, driven by photonics (30% CAGR), power electronics (12% CAGR) and wafer level encapsulation (13% CAGR). Many existing ALD equipment vendors diversify the lineup between 200 mm and 300 mm platform while more vendors appear worldwide.

This webinar is co-presented by two Yole Développement analysts from Semiconductor Manufacturing team, Vishnu Kumaresan and Taguhi Yeghoyan, and one System Plus Consulting Technology & Cost Analyst, Amine Allouche.

Yole Développement will explain latest advancement in the equipment from technology and market point of view as well as discuss epitaxy and ALD ecosystem.

System Plus Consulting will present some real examples of SiC and GaN epitaxy structures in power electronic devices and their impact on final device manufacturing cost.

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