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LIVE WEBINAR | GaN revolution: from innovation to high-volume manufacturing
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Power & RF GaN webinar – Delve into the key market trends and manufacturing solutions shaping the future of the industry
Power & RF GaN markets maintain their growth trajectories to beyond $2.45 billion and $1.9 billion, in 2029. This comes with a significant cumulative annual growth rate (CAGR) of 46% and 10%, respectively, in the period 2023-2029.
All segments of the power GaN market will see continued growth, with the consumer segment dominating over the next 5 years. Yole Group anticipates the RF GaN market will gradually gain momentum in 2024, surpassing US$1.9 billion by 2029, driven by applications including telecom infrastructure and satellite communications.
Join us for this in-depth online event to learn about the exciting growth markets of power & RF GaN, where industry experts from Lam Research and Yole Group will delve into the key market trends and drivers and present solutions for high-volume manufacturing that are propelling GaN technologies to new heights.
This webinar, featuring experts from Lam Research Corp. and the Yole Group, is a must-attend for semiconductor professionals seeking to understand the future of GaN devices, their market drivers, and solutions for high-volume manufacturing.
“Demonstrating Lam’s continuous innovation in the Specialty Technologies sector, we are addressing the challenges of high-volume GaN device fabrication by leveraging our production-proven, solutions. We have focused on GaN-on-Si based HEMT and monolithically integrated IC devices for power management applications,” explains Dr. David Haynes, Vice President, Specialty Technologies, Lam Research. “We are already applying the learning to key GaN-on-Si RF applications and to other GaN-based devices such as micro-LEDs. During this online event, presented in collaboration with Yole Group, we will review the capabilities that Lam has developed to support GaN device manufacturing and highlight the major benefits they are delivering to our customers.”
GaN market drivers
Consumer fast chargers and adapters remain the main drivers for power GaN. New trends include higher power and ‘all-GaN’ chargers, leading to more GaN content per charger. Power GaN is also expanding to other consumer applications, such as OVP in smartphones, presenting a billion-unit market opportunity. Besides consumer, Yole Group’s analysts expect two more growth drivers for power GaN: automotive and datacom market segments. Indeed, GaN technology is also poised to enter the automotive market in large volumes, driven by the electric vehicle boom and its associated demand for onboard chargers, as well as DC-DC converters. The telecom and infrastructure sector are expected to be another source of growth over the coming years, as artificial intelligence increases demand for data center capacity. For RF GaN, telecom infrastructure and satellite communications are, without doubt, the main market drivers. And Yole Group underlines significant new opportunities in telecom, for RF GaN-on-Si technology.
Webinar’s program
Sponsored by Lam Research, a global supplier of innovative wafer fabrication equipment and services, this program will provide insights on plasma etch, deposition and clean solutions for power and RF GaN, highlighting emerging markets and high-volume manufacturing trends. Lam’s production-proven solutions are enabling breakthroughs in the performance and reliability of next generation GaN devices.
- Power to RF industries: GaN’s journey to a $4.35 billion market by 2029
Ezgi Dogmus, Activity Manager, Semiconductor Substrates & Materials at Yole Group
A rising star in the wide band gap semiconductor family, Gallium nitride (GaN) plays an important role in power and RF applications, with respective device markets poised to grow beyond $2.45 billion and $1.9 billion by 2029.
While power GaN market is expected to flourish, in consumer, data center and automotive segments with a remarkable CAGR of 46% from 2023 to 2029, RF GaN is fueled by advancements in telecom infrastructure, satellite communication and more.
Yole Group’s presentation will delve into power and RF GaN markets, exploring technological challenges, market outlooks, and evolving landscapes.
- Addressing the challenges of high-volume GaN device fabrication. Enabling Specialty Technologies by leveraging production-proven, leading-edge solutions
Michelle Bourke, Managing Director, CSBG Strategic Marketing, Lam Research Corp.
David Haynes, Vice President, Specialty Technologies, Lam Research Corp.
GaN-on-silicon based HEMTs and ICs have emerged as key technologies that will support next generation power and RF solutions. Today they are already established in applications such as fast mobile phone chargers and they will play an increasingly important role in future automotive and wireless communications systems as well.
Despite this ongoing adoption of GaN devices, the unique technical challenges associated with GaN HEMT fabrication still need to be addressed to further improve both device performance and reliability, and manufacturing productivity and yield.
At Lam, we have focused on addressing these challenges for GaN-on-silicon based HEMT and monolithically integrated IC devices for power management applications. However, we are already applying the learning to key GaN-on-silicon RF applications and to other GaN based devices such as micro-LEDs. In this webinar, we will discuss some of the key challenges of GaN device processing, summarize the capabilities we have developed to support GaN device manufacture, and highlight some of the device performance benefits they are delivering to our customers.
- Live questions & answers session
Moderated by Claire Troadec, Director of the More than Moore activities at Yole Group
Do not miss the opportunity to hear from experts at the forefront of semiconductor manufacturing technologies.
Save the date and be part of this exciting online event, that’s sure to spark your interest and broaden your knowledge in what the future holds for GaN devices.
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Yann Lamy
Head of Laboratory for Power Semiconductor Devices
Yann Lamy is Head of Laboratory for Power Semiconductor devices at CEA Leti.
Yann Lamy received an engineering Master degree from ESPCI, Paris in 2003. His PhD thesis was carried out in CEA LETI between 2003 and 2006 dedicated to high frequency soft magnetic material for RF applications.
From 2006 to 2009, he was a research scientist at NXP Semiconductors in Eindhoven developing 3D integration modules and advanced integrated passives. Back to CEA LETI in 2010, he occupied different positions in program management in process integration, before being Key Account Manager for engineered Substrates development.
Since 2023, he is managing the Power Semiconductors Devices Laboratory of CEA LETI, which develops GaN and SiC components. His laboratory bridges the gap from material to the integration, from early stage and disruptive concepts up to power converters prototypes in link with system department and industrial end users.
Michelle Bourke
Managing Director of Strategic Marketing
Michelle Bourke is Managing Director of Strategic Marketing at Lam Research.
Michelle Bourke received her B.Sc. degree in Optoelectronics and Laser Engineering from Heriot-Watt University in Scotland, UK. Subsequently she joined the Defence Evaluation and Research Agency (DERA), where she worked on advanced processing methods for GaAs/AlGaAs optoelectronic devices. In 1997 she entered the semiconductor capital equipment industry as a technologist and has since accrued more than 25 years of experience in semiconductor technology, strategy, and new product development. She is a specialist in fabrication technologies for MEMS, Power Devices, RF Electronics and Optoelectronics.
Michelle is a frequent presenter at leading industry forums and also serves on many committees and industry councils. In November of 2018, she was inducted into the Semi MEMS and Sensors Industry Group Hall of Fame and in 2020 she was a Silicon Valley YWCA Tribute to Women Honoree. Michelle is currently Chair of the Semi MEMS Manufacturing Working Group, Co-chair of the Semi MEMs Standards Committee and a Director on the Transducers Research Foundation Board where she is the Chair of Fund Raising and Development Committee.
Michelle joined Lam Research in 2015 and is currently Managing Director of Strategic Marketing in Lam’s Customer Support Business Group.
David Haynes
Vice President of Specialty Technologies and Strategic Marketing
David Haynes is Vice President of Specialty Technologies and Strategic Marketing at Lam Research.
David gained a B.Eng and PhD in Materials Engineering from Swansea University. His PhD thesis was in the field of organic semiconductors for electronic and optoelectronic applications.
In his professional career, David has accrued more than 25 years of experience in the Semiconductor Capital Equipment and research instrumentation sectors. Focused on new technology development, he has a strong process background in plasma etch and deposition for optoelectronics, photonics, MEMS, Power and RF Electronics, as well as advanced chip packaging technologies.
Building on this technical knowledge, David has a proven track record in developing strategic business partnerships, specializing in new technology developments and introduction of enabling process capabilities to leading semiconductor fabs worldwide.
David joined Lam Research in June 2016. He is currently Vice President of Specialty Technologies and Strategic Marketing in Lam’s Customer Support Business Group and is responsible for Lam’s strategy in Specialty Technologies.
Claire Troadec
Business Line Director, More than Moore activities
Claire Troadec is Business Line Director of the More than Moore activities at Yole Group. These activities are covering imaging & display, photonics & sensing, battery & power semiconductors, and radio frequency.
Based on her valuable experience in the semiconductor industry, Claire is managing the expansion of the technical and market expertise of the More than Moore activities. Daily interactions with leading companies allow these analysts to collect a large amount of data and cross their vision of market segments’ evolution and technology breakthroughs.
In addition, Claire’s mission is focused on the management of business relationships with leading companies of this sector and the development of market research and strategy consulting activities inside the Yole Group.
Claire Troadec holds a Master’s degree in Applied Physics specializing in Microelectronics from INSA (Rennes, France). She then joined NXP Semiconductors and worked for 7 years as a complementary metal-on-silicon oxide semiconductor (CMOS) process integration engineer at the IMEC R&D facility. During this time, she oversaw the isolation and performance boosting of CMOS technology node devices from 90 nm down to 45 nm. She has authored or co-authored seven US patents and nine international publications in the semiconductor field and managed her own distribution company before joining Yole Group in 2013.
Ezgi Dogmus, PhD
Activity Manager, Semiconductor Substrates & Materials
Ezgi Dogmus, PhD is Activity Manager, Semiconductor Substrates & Materials at Yole Group.
With an international team of analysts, she is managing the expansion of the technical expertise and the market know-how of the company. In addition, Ezgi actively assists and supports the development of dedicated collection of market & technology products, as well as custom consulting projects.
Prior to Yole Group, Ezgi worked as a process development engineer for GaN-based RF and power solutions at IEMN (Lille, France).
After graduating from University of Augsburg (Germany) and Grenoble Institute of Technology (France), Ezgi received her PhD in microelectronics at IEMN (France).
Taha Ayari, Ph.D.
Technology & Market Analyst, Semiconductor Substrates & Materials
Taha Ayari, Ph.D., is Technology & Market Analyst, Semiconductor Substrates & Materials at Yole Group.
Taha’s expertise is mainly in power electronics with related WBG materials and emerging semiconductor substrates. He is fully engaged in the development of technology and market products, as well as custom projects.
Taha has two years’ experience as a Technology & Cost Analyst at Yole Group, where he focuses on the development of compound semiconductor reverse engineering & costing analyses.
Prior to Yole Group, Taha was a research engineer at Georgia Tech Lorraine (Metz, France). He published numerous papers with a particular focus on III-N materials.
Taha holds an MSc and a Ph.D. in electrical and computer engineering from the Georgia Institute of Technology (Atlanta, USA).
Lam Research Corporation is a trusted global supplier of innovative wafer fabrication equipment and services to the semiconductor industry.
Our strong values-based culture fuels our progress, and it’s through collaboration, precision, and delivery that we are driving semiconductor breakthroughs that define the next generation. Lam Research (Nasdaq: LRCX) is a FORTUNE 500® company headquartered in Fremont, California, with operations around the globe.
We combine superior systems engineering, technology leadership, and a commitment to customer success to advance the global semiconductor industry. Our broad portfolio of market-leading deposition, etch, strip, and wafer cleaning solutions helps customers achieve success on the wafer by enabling device features that are 1,000 times smaller than a grain of sand—it’s why nearly every chip today is built with Lam technology. Learn more at www.lamresearch.com.