“Short wave” refers to a portion of the infrared spectrum between 1 µm and 3 µm in wavelength. Short-wave infrared (SWIR) imagers based on InGaAs technology have found use in defense markets, for example, where they implement laser target designation and enhanced vision in harsh conditions, as well as in industrial applications such as semiconductor defect detection, package content inspection and inventory sorting.
Historically, SWIR imaging has been a niche market, with cost a key factor limiting broader adoption. InGaAs image sensors typically range in cost from a few thousand to more than ten thousand dollars. However, SWIR is now at a turning point, driven by the emergence of more cost-effective implementations based on quantum dots, germanium and various organic and other materials. The promise of lower-price image sensors has attracted interest in SWIR from consumer electronics and other high-volume applications. For this market growth potential to become a reality, however, the technology will also require further refinement in sensitivity, dark current, response time and other metrics.
Yole Group will be the guest speaker with:

Axel CLOUET,
Technology & Market Analyst, Imaging
Yole Intelligence part of Yole group
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Axel Clouet, PhD
Product Marketing Manager, Market Intelligence
Axel Clouet, PhD is Product Marketing Manager at Yole Group.
Axel occupies a new position in the company's marketing department where he bridges products, sales, and markets, tailoring reports and services for global clients. He leverages strong technical insight to develop value propositions and support strategic product initiatives.
Prior to this position, Axel was a Senior Technology & Market Analyst, Imaging, in the Imaging & Display team. He contributed daily to technology & market analyses on various imaging technologies and participated in the production of the relevant Yole Group products.
Axel Clouet is the author of various scientific papers and conference presentations.
Axel earned his PhD on CMOS image sensors at CEA-Leti (France) after graduating from the Grenoble Institute of Technology (France) with a specialization in semiconductor physics.