Technology, Process and Cost Comparison
1200V IGBT Comparison 2023
By Yole SystemPlus —
Technology and cost comparison of five 1200V Si IGBT devices amongst a roadmap of 18 Si IGBT devices of 1200V class from worldwide players.
SPR23788
Overview / Introduction
- Executive summary
- Reverse costing methodology
- Glossary
Technology & Market
Company Profile
Physical Analysis
- Summary of Physical Analysis
- Infineon IKZA40N120CS7XKS
- ROHM RGS50TSX2DHR
- STMicroelectronics STGYA50M120DF3
- MCC MIW40N120FLA
- Diodes Incorporated DGTD120T25S1PT
Technology and Physical Comparison
- Device performance comparisons (FOM, current density)
- Device design comparisons of all the 1200V IGBTs
- Physical parameters trends
Manufacturing Process Flow
- Supply chain of all analyzed manufacturers
- Wafer fabrication unit hypotheses for all analyzed manufacturers
- Manufacturing process flow schematics of selected IGBT processes
Cost and Price Analysis
- Yields explanation & hypotheses
- For each of the 5 new IGBTs:
- Wafer cost
- Die cost
- Packaging cost (only for discrete packaging)
- Component cost
- Component price
Cost Comparison
- Comparisons include wafer, die costs, die Ampere costs for all newly analyzed device.
Feedbacks
Related Products
About Yole Group
The growth of the discrete IGBT market is forecasted to continue with a Compound Annual Growth Rate (CAGR) of 0.6% between 2018-2028, according to Yole Intelligence. The growth will be dominated with the increase adoption of IGBTs in commercial and passenger electric vehicles.
Device manufacturers continue the development of Si IGBTs with the release of devices in new packages or designs for improve electrical performances. The field stop trench design remains the most common design for IGBTs.
In this report, Yole SystemPlus presents an overview of the state of the art of twenty 1200 V Si IGBT transistors. They highlight differences in design and manufacturing processes, and their impact on device size and manufacturing cost.
The report analyzes 18 IGBTs from nine players: Infineon, onsemi, ROHM, STMicroelectronics, Mitsubishi Electric, Fuji Electric, Littelfuse, Micro Commercial Components (MCC) and Diodes Incorporated.
Compared to the 2022 report, this report analyzes exclusively the 1200V class with addition of 5 new devices.
The report provides detailed optical and Scanning Electron Microscope (SEM) pictures from the device’s packaging down to the microscopic level of transistor design, with a focus on the latter. This detailed analysis is performed for 5 newly added IGBTs. For devices previously analyzed by Yole SystemPlus, please refer to the dedicated reports for the full technology analysis. However, the excel document attached to this report contains the database of all the previously analyzed devices with their physical and electrical parameters.
Yole SystemPlus performs cost simulations for all newly added IGBTs. The estimated manufacturing costs and their selling prices for the devices are highlighted. Finally, this report provides exhaustive physical, technology and manufacturing cost comparisons of the analyzed devices.
- Diodes Incorporated
- Fuji Electric
- Infineon
- Littelfuse
- Micro Commercial Components (MCC)
- Mitsubishi Electric
- Onsemi
- ROHM
- STMicroelectronics
Key Features
- Detailed photos
- Precise measurements
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Estimated selling price
- Exhaustive physical, technology, and manufacturing cost comparisons
What's new?
- Compared to the 2022 report, there are 5 new Si IGBT devices.
- The report analyzes 1200V class covering the following players: Infineon, ROHM, STMicroelectronics, MCC and Diodes Incorporated.
- Complete mapping of a total of eighteen 1200V Si IGBTS from worldwide players.
Product Objectives
- Provide a technology overview of Si IGBTs from main market players: exhaustive roadmap of eighteen(18) Si IGBT of 1200V class from various worldwide power semiconductor players.
- Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of transistor design.
- Provide exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.
- Physical analysis is only shown for the 5 newly added Si IGBTs. For devices previously analyzed by Yole SystemPlus, please refer to the related reports published by Yole SystemPlus). Moreover, the physical and technological parameters of all 18 devices are detailed in the Excel file.