Technology, Process and Cost
16Gb DDR5 DRAM Memory from Micron
By Yole SystemPlus —
In-depth technical and cost analysis of Micron’s 10nm-class DRAM memory
SPR23686
Overview
- Executive Summary
- Reverse Costing Methodology
- Glossary
Company Profile
- Micron
- Location
- DDR5 DRAM
Market Analysis
- Revenue
- Market Share
Physical Analysis
- Summary
- Module Disassembly
- Package Analysis
(overview, X-Ray Images, cross section, opening)
- Memory Die Analysis
(overview, cross section, opening, delayering, process)
Manufacturing Process Flow
- Global Overview
- DRAM Front-End Process
- DRAM Front-End Wafer Fabrication Unit
- DRAM Manufacturing Process
- Assembly and Final Test
Cost Analysis
- Cost Summary
- Yields Explanation & Hypotheses
- DRAM Die Front-End Wafer Cost
- DRAM Die Cost
- Packaging Cost
- Component Cost
Selling Price
- Definitions of Price
- Estimated Selling Price
Feedbacks
Related Products
About Yole Group
In 2022, DRAM market revenue was estimated at $82 billion. This was a 12% decrease compared to 2021 revenue, due to lower demand and a weaker average selling price. Micron’s DRAM market share was estimated at 25% in 2022, trailing Samsung and SK hynix.
Micron’s fifth-generation double date rate (DDR5) caters to both consumer and datacenter applications. It is designed to address performance challenges, and the DIMM includes a power management integrated circuit (PMIC) used for voltage regulation in the module to enable better power regulation. Each package on the DIMM contains a single 16Gb DRAM chip, and different innovations are integrated in the DRAM and DIMM manufacturing to match the demand from high-performance applications and heavy dataloads. For example, shrinking the DRAM cell process node is very common for increasing die density. Moreover, the modification of different features, such as bank number increase and modified DIMM channel paths, was adopted to improve DRAM/DIMM speeds and optimize power efficiency in equal measure.
Micron’s first DDR5 dies used in the DDR5 DIMM are 16Gb dies, manufactured using the company’s 1Dz technology node. Micron claims that the DDR5 offers improved bandwidth, delivering 36% more than the DDR4. This improved performance and bandwidth are key requirements for CPU cores and datacenter applications. Also, the DDR5’s operating voltage is decreased by 20%, enabling reduced power consumption.
This full reverse costing study was conducted to provide insight on the technology and manufacturing cost of Micron’s first-generation DDR5 memory using 10nm-class process technology. Included herein are Crucial’s 16GB DIMM images and extraction of the DDR5 2GB package. This report also furnishes a teardown analysis of the DDR5 DRAM package and die, accompanied by optical and high-resolution SEM images. The DRAM memory die cross-section reveals the capacitor region and the transistors used by Micron’s DDR5 dies. Also included are TEM images and the manufacturing process. Moreover, a cost analysis shows a full breakdown of the DRAM cost, an estimation of DRAM capacitor manufacturing cost, transistor manufacturing cost, and the metal layers included in the process. Finally, the price is included, along with the related estimated gross margins per quarter.
- Micron
Key Features
- Detailed photos
- Precise measurements
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation with precise measurements
- Manufacturing cost analysis
- Component price and estimated margins
What's new
- Micron’s fifth-generation DRAM, targeting consumer and server applications
- Improved performance and bandwidth
- Improved speed
- 10 nm class (1Dz technology node)