650V Si IGBT Comparison 2023

Overview / Introduction

• Executive summary
• Reverse costing methodology
• Glossary

Technology & Market

Company Profile

Physical Analysis

• Summary of Physical Analysis
• Bourns BIDW50N65T
• Infineon IKZA50N65EH7
• Onsemi FGH4L50T65MQDC50
• STMicroelectronics STGH30H65DFB-2AG
• ROHM RGW80TS65CHR
• Toshiba GT30J65MRB

Technology and Physical Comparison

• Device performance comparisons (FOM, current density)
• Device design comparisons of all the 650V IGBTs
• Physical parameters trends

Manufacturing Process Flow

• Supply chain of all analyzed manufacturers
• Wafer fabrication unit hypotheses for all analyzed manufacturers
• Manufacturing process flow schematics of selected IGBT processes

Cost and Price Analysis

• Yields explanation & hypotheses
• For each of the 6 new IGBTs:
  • Wafer cost
  • Die cost
  • Packaging cost (only for discrete packaging)
  • Component cost
  • Component price

Cost Comparison

• Comparisons include wafer, die costs, die Ampere costs for each voltage class

Feedbacks

Related Products

About Yole Group

The growth of the discrete IGBT market is forecasted to continue with a Compound Annual Growth Rate (CAGR) of 0.6% between 2018-2028, according to Yole Intelligence. The growth will be dominated with the increase adoption of IGBTs in commercial and passenger electric vehicles.

Device manufacturers continue the development of Si IGBTs with the release of devices in new packages or designs for improve electrical performances. The field stop trench design remains the most common design for IGBTs.

In this report, Yole SystemPlus presents an overview of the state of the art of twenty 650 V Si IGBT transistors. They highlight differences in design and manufacturing processes, and their impact on device size and manufacturing cost.

The report analyzes 20 IGBTs from ten players: Infineon, onsemi, STMicroelectronics, Mitsubishi Electric, ROHM, WeEn Semiconductors, Micro Commercial Components (MCC), Renesas, Toshiba and Bourns. They target various power applications, including 7 automotive AEC-Q101 qualified devices.

Compared to the 2022 report, this report analyzes exclusively the 650V class with addition of 6 new devices. The report includes two new automotive-qualified devices from ROHM and Infineon. For the first time, hybrid IGBTs (co-packaged with SiC diode) have been added to the Yole SystemPlus list of analyzed devices.

The report provides detailed optical and Scanning Electron Microscope (SEM) pictures from the device’s packaging down to the microscopic level of transistor design, with a focus on the latter. This detailed analysis is performed for six newly added IGBTs. For devices previously analyzed by Yole SystemPlus, please refer to the dedicated reports for the full technology analysis. However, the excel document attached to this report contains the database of all the previously analyzed devices with their physical and electrical parameters.

Yole SystemPlus performs cost simulations for all newly added IGBTs. The estimated manufacturing costs and their selling prices for the devices are highlighted. Finally, this report provides exhaustive physical, technology and manufacturing cost comparisons of the analyzed devices.

• Bourns Inc.​
• Infineon​
• Micro Commercial Components​
• Onsemi​
• Renesas​
• ROHM​
• STMicroelectronics​
• Toshiba​
• WeEn Semiconductors

Key Features

• Detailed photos
• Precise measurements
• Materials analysis
• Manufacturing process flow
• Supply chain evaluation
• Manufacturing cost analysis
• Estimated selling price
• Exhaustive physical, technology, and manufacturing cost comparisons

What's new

• Compared to the 2022 report, there are 6 new Si IGBT devices. 
• The report analyzes 650V class covering the following players: Infineon, onsemi, STMicroelectronics, Mitsubishi Electric, ROHM, WeEn Semiconductors, Micro Commercial Components (MCC), Renesas, Toshiba and Bourns Inc.
• Complete mapping of a total of twenty 650V Si IGBTS from worldwide players.

Product Objectives

• Provide a technology overview of Si IGBTs from main market players: exhaustive roadmap of twenty(20)  Si IGBT  of 650V class from various worldwide power semiconductor players.
• Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of transistor design.
• Provide exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.
• Physical analysis is only shown for the 6 newly added Si IGBTs. For devices previously analyzed by Yole SystemPlus, please refer to the related reports published by Yole SystemPlus). Moreover, the physical and technological parameters of all 20 devices are detailed in the Excel file.