Technology, Process and Cost Comparison

650V Si IGBT Comparison 2023

By Yole SystemPlus

Technology and cost comparison of six 650V Si IGBT devices amongst a roadmap of 20 Si IGBT devices of 650V class from worldwide players.


Key Features

  • Detailed photos
  • Precise measurements
  • Materials analysis
  • Manufacturing process flow
  • Supply chain evaluation
  • Manufacturing cost analysis
  • Estimated selling price
  • Exhaustive physical, technology, and manufacturing cost comparisons

What's new

  • Compared to the 2022 report, there are 6 new Si IGBT devices. 
  • The report analyzes 650V class covering the following players: Infineon, onsemi, STMicroelectronics, Mitsubishi Electric, ROHM, WeEn Semiconductors, Micro Commercial Components (MCC), Renesas, Toshiba and Bourns Inc.
  • Complete mapping of a total of twenty 650V Si IGBTS from worldwide players.

Product Objectives

  • Provide a technology overview of Si IGBTs from main market players: exhaustive roadmap of twenty(20)  Si IGBT  of 650V class from various worldwide power semiconductor players.
  • Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of transistor design.
  • Provide exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.
  • Physical analysis is only shown for the 6 newly added Si IGBTs. For devices previously analyzed by Yole SystemPlus, please refer to the related reports published by Yole SystemPlus). Moreover, the physical and technological parameters of all 20 devices are detailed in the Excel file.

Do you have an account?

Sign in to your account to access your services