Bourns Inc BIDNW30N60H3 600V IGBT

Overview / Introduction

• Executive summary
• Reverse costing methodology
• Glossary

Company Profile

Physical Analysis

• Summary
• Package Analysis
  • Package View & Opening
  • Package Cross-Section
• IGBT Die Analysis
  • Die Views & Dimensions
  • Die Delayering
  • Die Cross Section

Manufacturing Process Flow

• IGBT Die Wafer Fab Unit
• IGBT Die Wafer Process Flow
• Assembly Unit

Cost Analysis

• Main Steps of the Economic Analysis
• Yields Explanation and Hypotheses
• IGBT Wafer & Die Cost
• Packaging Cost
• Component Cost

Selling Price

Feedback

Related Products

Yole Group Corporate Presentation

The growth of the discrete IGBT market is forecasted to continue with a Compound Annual Growth Rate (CAGR) of 0.6% between 2018-2028, according to Yole Intelligence. The growth will be dominated with the increase adoption of IGBTs in commercial and passenger electric vehicles.

Bourns has added the 600 V IGBT to its product portfolio utilizing the trench gate MOS technology. The device is composed of an IGBT die co-packaged with a built in fast recovery diode. It is suitable for SMPS, UPS, PFC and induction heating applications.

Yole SystemPlus provides a full reverse costing study of Bourns BIDNW30N60H3 600V IGBT.

This is a TO-247 package device with a 600V, 30 A (@TC =100°C) continuous drain current. The report provides detailed optical and Scanning Electron Microscope (SEM) pictures from the device’s packaging down to the microscopic level of transistor design, with a focus on the latter.

This report also provides a technology overview, the manufacturing cost and selling price of the IGBT die device, as well as an estimated manufacturing cost of all the process steps.

• Bourns Incorporation

Key Features

• Detailed photos
• Precise measurements
• Materials analysis
• Manufacturing process flow
• Detailed Manufacturing cost analysis by process steps
• Estimated selling price

Product Objectives

• Provide a technology analysis of Bourns Inc BIDNW30N60H3 600V IGBT.
• Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of transistor design.
• Provide exhaustive physical, technology, and manufacturing cost analysis of the analyzed device.