Technology, Process and Cost
EPC2152 Half Bridge Monolithic GaN IC
By Yole SystemPlus —
EPC’s 70 V ePower stage with separate and independent high and low side control inputs.
Overview/Introduction
- Executive Summary
- Market
- Reverse Costing Methodology
- Glossary
Company Profile and Supply Chain
Physical Analysis
- Methodology
- Summary of the Physical Analysis
- Package Analysis
- Package Opening and Cross-Section
- Die: eGaN® FET
- Die View, Dimensions and Cross-Section
- Die Process
- Die: IC Driver
- Die View, Dimensions and Cross-Section
- Die Process
Manufacturing Process Flow
- Die Front-End Fabrication Unit
- Die Front-End Process Flow
- Final Test and Packaging Fabrication Unit
- Die Back-End Process Flow
Cost Analysis
- Summary of the Cost Analysis
- Yield Explanations and Hypotheses
- Device Cost
- Wafer Front-End Cost
- Wafer Front-End Cost per Step
- Packaging Cost
- Die Cost
- Die Back-End Probe Test and Dicing Cost
- Component Cost
Price Analysis
- Definition of Prices
- Estimation of Selling Price
Comparison
- Comparison Between Half-Bridge Driver GaN FETs from EPC and Texas Instruments
Feedback
Company Services
The promising market outlook for GaN devices is highlighted by a compound annual growth rate (CAGR) of 76% for the period 2019-2025, according to Yole Développement. The Power GaN market is expected to be worth $700M in 2025, up from $24M in 2019, driven by consumer applications. In this context, Efficient Power Conversion (EPC), one of the GaN industry’s leaders, is further extending its product portfolio by introducing the EPC 2152, its latest monolithically integrated half-bridge HEMT. System Plus Consulting is now offering a complete reverse costing of the EPC2152.
The device is a single chip driver plus an enhancement-mode gallium-nitride (eGaN®) half-bridge power stage. It is adapted for several applications such as buck and boost converters. The design consists of a 70V, 12.5A ePowerTM stage in a low inductance surface mount Land Grid Array (LGA) package.
In this report, System Plus Consulting presents a deep teardown analysis of the EPC2152, including detailed optical and SEM pictures as well as cross-sections with energy-dispersive X-ray analysis from the packaging down to the epitaxial structure.
Based on a complete teardown analysis, the report provides a detailed manufacturing process flow and manufacturing cost analysis of the die and the package as well as the estimated selling price of the device.
Finally, the report includes a comparison with a GaN-based System-in-Package power IC from Texas Instruments. This comparison highlights the differences in GaN die designs and manufacturing costs.
Complete teardown with:
- Detailed optical and SEM photos
- Precise measurements
- Materials EDX analysis
- Supply chain evaluation
- Manufacturing cost analysis
- Estimated selling price
- Technology and cost comparisons with Texas Instruments’ GaN ICs.
