Infineon EasyPACK™ FS100R12W2T7

The market outlook for the power electronics industry is promising. In 2019, the power semiconductor device market segment represented US$17.5 billion, with a compound annual growth rate (CAGR) for 2019-2025 of 4.3%. IGBT modules, which represent $3.7B in 2019, are traditionally used in applications such as industrial or renewable energy converters. These applications are today driven by efficiency regulations or increasing clean energy goals, and they account for 46% of the total IGBT module market.

In this dynamic market, Infineon Technologies introduced the new IGBT7 technology for its Easy housing platform in March 2019. Based on the new micro-pattern trench technology, the TRENCHSTOP™ IGBT7 chip has a new cell structure in contrast to the formerly-used square trench cells in IGBT3 and IGBT4.

System Plus Consulting provides a full reverse costing study of the Infineon EasyPACK™ FS100R12W2T7. This power module uses the newest IGBT and Diode technologies from Infineon: TRENCHSTOP™ IGBT7 and EC7 Diode. It drives a nominal current of 100A with a voltage rating of 1200V.

Supported by a full teardown of the module’s components and housing, this report reveals Infineon’s technological choices in its new IGBT7 chip as well as the design of its diode, and the module packaging structure.

This report provides insights on technology data, manufacturing cost and selling price of all module components. Also included are technology and cost comparisons between Infineon IGBT3, IGBT4, IGBT5, and IGBT7.

Introduction

• Executive Summary
• Market Overview
• Reverse Costing Methodology

Company Profile

• Infineon Company Profile
• Datasheet and Technology

Physical Analysis

• Summary and Overview
• Package Analysis
  • Package opening
  • Package cross-section
• Si IGBT Die
  • IGBT die view and dimensions
  • IGBT die process and cross-section
• Si Diode Die
  • Diode die view and dimensions
  • Diode die process and cross-section

Manufacturing Process Flow

• Si IGBT Fabrication Unit and Process Flow
• Si Diode Fabrication Unit and Process Flow
• Final Test and Packaging Fabrication Unit and Packaging Process Flow

Cost Analysis

• Yield Explanations and Hypotheses
• Si IGBT
  • IGBT front-end cost
  • IGBT wafer cost per process step
  • IGBT die probe test and dicing
  • IGBT die cost
• Si Diode
  • Diode front-end cost
  • Diode wafer cost per process step
  • Diode die probe test and dicing
  • Diode die cost
• DBC Cost
  • DBC BOM cost and DBC assembly cost
• Module Cost
  • Module BOM cost and packaging Assembly cost
  • Final module cost

Selling Price Analysis

• Estimation of Selling Price

Comparison

• Infineon IGBT Evolution : Technology and Cost Comparison

Reverse costing with:

• Detailed optical and SEM photos
• Precise measurements
• Material EDX analysis
• Manufacturing process flow
• Supply chain evaluation
• Manufacturing cost analysis
• Estimated selling price
• Technology and cost comparisons between Infineon IGBT technologies: IGBT3, IGBT4, IGBT5, and IGBT7