Technology, Process and Cost
Nexperia NGW30T60M3DFQ 600V IGBT
By Yole SystemPlus —
Technology, Process and cost overview of Nexperia NGW30T60M3DFQ 600V IGBT
SPR24845
Overview / Introduction
- Executive summary
- Reverse costing methodology
- Glossary
Company Profile
Physical Analysis
- Summary
- Package Analysis
- Package View & Opening
- Package Cross-Section
- IGBT Die Analysis
- Die Views & Dimensions
- Die Delayering
- Die Cross Section
Manufacturing Process Flow
- IGBT Die Wafer Fab Unit
- IGBT Die Wafer Process Flow
- Assembly Unit
Cost Analysis
- Main Steps of the Economic Analysis
- Yields Explanation and Hypotheses
- IGBT Wafer & Die Cost
- Packaging Cost
- Component Cost
Selling Price
Feedback
Related Products
Yole Group Corporate Presentation
The growth of the discrete IGBT market is forecasted to continue with a Compound Annual Growth Rate (CAGR) of 0.6% between 2018-2028, according to Yole Intelligence. The growth is fueled by the increase adoption of IGBTs in commercial and passenger electric vehicles.
Although the IGBT technology is already established, various players continue the development of these devices with new product releases. Nexperia has entered the IGBT market with the release of a 600 V IGBT utilizing the carrier-stored trench-gate and field stop technology. The device is composed of an IGBT die co-packaged with a soft fast reverse recovery silicon diode. It is suitable for motor drives, power inverters, induction heating, and welding applications.
Yole SystemPlus provides a full reverse costing study of Nexperia NGW30T60M3DFQ 600V IGBT.
This is a TO-247 package device with a 600V, 30A collector current rating. The report provides detailed optical and Scanning Electron Microscope (SEM) pictures from the device’s packaging down to the microscopic level of transistor design, with a focus on the latter.
This report also provides a technology overview, the manufacturing cost and selling price of the IGBT die device, as well as an estimated manufacturing cost of all the process steps.
Nexperia, Wingtech Technology
Product Objectives
- Provide a technology analysis of Nexperia NGW30T60M3DFQ 600V IGBT.
- Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of transistor design.
- Provide exhaustive physical, technology, and manufacturing cost analysis of the analyzed device.