Nexperia GAN190-650EBEZ

Overview / Introduction 

• Executive summary
• Reverse costing methodology
• Glossary 

Company Profile  

Physical Analysis 

• Summary
• Package Analysis
  • Package View & Opening
  • Package Cross-Section
• GaN HEMT Die Analysis
  • Die Views & Dimensions
  • Die Delayering
  • Die Cross Section

Manufacturing Process Flow 

• GaN HEMT Wafer Fab Unit
• GaN HEMT Wafer Process Flow
• Assembly Unit

Cost Analysis 

• Main Steps of the Economic Analysis
• Yields Explanation and Hypotheses
• GaN HEMT Wafer & Die Cost
• Packaging Cost
• Component Cost

Selling Price 

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Yole Group Corporate Presentation

Yole Intelligence expects the GaN power electronics device market to reach beyond $1.9 billion by the year 2028. The adoption of GaN devices in various consumer fast-charging applications is driving the growth of this segment.

Major IDMs in the power business have accelerated the development of their GaN product portfolio. Nexperia has recently introduced new e-mode low and medium voltage GaN HEMT devices with their proprietary and specific epitaxy technology. Nexperia medium voltage GaN HEMTs are offered in  both cascode and e-mode designs.

Yole SystemPlus provides a full reverse costing study of the latest medium voltage Nexperia GAN190-650EBEZ 650V Power HEMT.

This is a DFN package device with a 650V, 190 mW rating and 11.5A (@TC =25°C) continuous drain current. Yole SystemPlus fully tears down the device, giving detailed overviews of the GaN HEMT’s physical parameters including detailed die dimensions of the GaN epilayer stack.

This report also provides a technology overview, the manufacturing cost and selling price of the GaN Power HEMT device, as well as an estimated manufacturing cost of all the process steps.

• Nexperia
• Wingtech Technology

Key Features

• Detailed photos
• Precise measurements
• Materials analysis
• Manufacturing process flow
• Detailed Manufacturing cost analysis by process steps
• Estimated selling price

Product objectives

• Provide a technology analysis of Nexperia Nexperia GAN190-650EBEZ 650V Power HEMT.
• Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of transistor design.
• Provide exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.