Technology, Process and Cost
Nexperia GAN3R2-100CBE
By Yole SystemPlus —
Technology, process and cost overview of Nexperia GAN3R2-100CBE WLCSP GaN HEMT.
SPR24795
Overview / Introduction
- Executive summary
- Reverse costing methodology
- Glossary
Company Profile
Physical Analysis
- Summary
- Package Analysis
- Package View & Opening
- Package Cross-Section
- GaN HEMT Die Analysis
- Die Views & Dimensions
- Die Delayering
- Die Cross Section
Manufacturing Process Flow
- GaN HEMT Wafer Fab Unit
- GaN HEMT Wafer Process Flow
- Assembly Unit
Cost Analysis
- Main Steps of the Economic Analysis
- Yields Explanation and Hypotheses
- GaN HEMT Wafer & Die Cost
- Packaging Cost
- Component Cost
Selling Price
Feedback
Related Products
Yole Group Corporate Presentation
Yole Intelligence expects the GaN power electronics device market to reach beyond $1.9 billion by the year 2028. The adoption of GaN devices in various consumer fast-charging applications is driving the growth of this segment.
Major IDMs in the power business have accelerated the development of their GaN product portfolio. Nexperia has recently introduced new e-mode low and medium voltage GaN HEMT devices with their proprietary technology. Nexperia low voltage GaN HEMTs are offered in both WLCSP and SMD packages.
Yole SystemPlus provides a full reverse costing study of the latest low voltage Nexperia GAN3R2-100CBE 100 V Power HEMT.
This is a WLCSP device with a 100V, 3.2 mW rating and 60A (@TC =25°C) continuous drain current. Yole SystemPlus fully tears down the device, giving detailed overviews of the GaN HEMT’s physical parameters including detailed die dimensions of the GaN epilayer stack.
This report also provides a technology overview, the manufacturing cost and selling price of the GaN Power HEMT device, as well as an estimated manufacturing cost of all the process steps.
- Nexperia
- Wingtech Technology
Key Features
- Detailed photos
- Precise measurements
- Materials analysis
- Manufacturing process flow
- Detailed Manufacturing cost analysis by process steps
- Estimated selling price
Product objectives
- Provide a technology analysis of Nexperia GAN3R2-100CBE WLCSP GaN HEMT.
- Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of transistor design.
- Provide exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.