Technology, Process and Cost
NXP Airfast Power Amplifier Module A5M36TG140-TC
By Yole SystemPlus —
NXP’s Airfast 10W fully integrated Doherty power amplifier module for wireless infrastructure applications integrating GaN-on-SiC dies.
SPR23796
Overview / Introduction
- Executive Summary
- Reverse Costing Methodology
- Glossary
Company Profile
Physical Analysis
- Summary
- Package Analysis
- Package Opening
- Package Cross-Section
- Die Analysis: Views, Dimensions, and Cross-Section
- GaN-on-SiC Die A
- GaN-on-SiC Die B
- LDMOS Die C
- LDMOS Die D
- Manufacturing Process Flow
- Dies Overview
- Wafer Fabrication Unit
- Packaging Fabrication Unit
Cost Analysis
- Main steps of economic analysis
- Yields Explanation & Hypotheses
- For each die:
- Front-End Cost
- Wafer Cost Per Process Steps (For GaN-on-SiC dies)
- Die Cost
- Packaging Cost
- Component Cost
Estimated Manufacturer Price Analysis
- Estimation of the Manufacturer Price
Feedbacks
Related Reports
About Yole Group
10W fully integrated Doherty power amplifier module with GaN-on-SiC dies
The GaN RF device market is expected to reach over US$2.6 billion by 2028 according to Yole Intelligence, and major actors are expanding their capacity to respond to this growing market demand. Formerly fabless, NXP is expected to increase its GaN revenue following its 6-inch GaN-on-SiC fab opening in Chandler, AZ in 2020.
Launched more than 20 years ago, GaN-on-SiC is now a serious rival to LDMOS and GaAs in RF power applications. Owing to their high bandwidth and efficiency, GaN-on-SiC devices continue to gain ground over LDMOS in the 5G market and are starting to benefit from a 6-inch wafer platform transition.
In this dynamic context, Yole SystemPlus provides a full reverse costing study of NXP’s Airfast Power Amplifier Module A5M36TG140-TC. This 10W fully integrated Doherty power amplifier module is designed for wireless infrastructure applications that require high performance in the smallest footprint. It operates from 3.4 to 3.8 GHz and can deliver an average power of 10W in a Doherty configuration.
Supported by a full teardown of the device, this report reveals NXP’s technology choices for its assembled device as well as the designs of the different dies inside it.
This report also provides insights into technology data, manufacturing cost, and selling price of the device, as well as an estimated manufacturing cost of all the device’s parts and a selling price analysis.
- NXP
Key Features
- Detailed photos
- Precise measurements
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Estimated selling price
Product Objectives
- Reveal NXP’s technology choices for its assembled device as well as the designs of the different dies inside it.
- Provide exhaustive physical, technology, and manufacturing cost of all the module’s parts including the design of the GaN-on-SiC dies inside it.