Technology, Process and Cost

NXP RF Power GaN 3.5 GHz for 5G Telecom Infrastructure

By Yole SystemPlus

14W-Average Asymmetrical Doherty RF Power GaN-on-SiC (A3G35H100-04S).

Key features of the report:

  • Detailed photos
  • Precise measurements
  • Materials analysis
  • Manufacturing process flow
  • Supply chain evaluation
  • Manufacturing cost analysis
  • Technology and cost comparisons between RF power GaN transistors: NXP A3G35H100-04S and Qorvo QPD0011

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