ROHM 4th Generation SiC MOSFET

Overview / Introduction                  

• Executive Summary
• Reverse Costing Methodology
• Glossary

Company Profile                 

Physical Analysis                 

• Summary
• Package Analysis
  • Package View & Opening
  • Package Cross-Section
• SiC MOSFET Die Analysis
  • Die Views & Dimensions
  • Die Delayering
  • Die Cross Section

Physical Comparison                 

• ROHM SiC MOSFET Generation Evolution
• ROHM Trench Technologies:  GEN3 vs GEN4 Comparison
• ROHM GEN4 : 750V vs 1200V  Comparison

Manufacturing Process Flow               

• SiC Wafer Fab Unit
• SiC Wafer Process Flow
• Assembly Unit
• Assembly Process Flow

Cost Analysis                

• Main Steps of the Economic Analysis
• Yields Explanation and Hypotheses
• SiC MOSFET Die Cost
• Packaging Cost
• Component Cost

Cost Comparison

• Example of Gen 3 vs Gen 4 devices cost comparison

Selling Price               

Feedback               

Related Products               

About Yole Group  

The market outlook for SiC devices is promising. According to Yole Intelligence’s CS Monitor (Q2-2022), it is expected to grow from $1B to $6B for the period 2021 - 2027. The technical panorama of SiC devices is still varied, and every manufacturer has its own solutions for die design and packaging integration. This leads to strong competition which will accelerate technical innovation and lower prices.

Moreover, SiC business models are still very different. We are seeing (and will continue to see) a restructuring of the supply chain, driven by the main cost factors.

Since the commercialization of the first SiC device in 2001, the performance of SiC devices and the value that they add has gradually been proven. Device price has also become increasingly acceptable to end-users.

In 2020, ROHM announced the 4^th generation of its industry-first SiC MOSFETs. This new generation employs a new trench structure (compared to the previous generation), with the deepest trenches that Yole SystemPlus has ever seen in any analyzed SiC MOSFET design.

In this context, Yole SystemPlus provides a full reverse costing study of one of the Gen4 SiC MOSFETs from ROHM: the SCT4026DE.

This is a discrete-packaged SiC power MOSFET with 750V breakdown voltage and 26 mOhm on-resistance.

Supported by a full teardown of this component, our report reveals ROHM’s technology choices for its Gen4 SiC die, as well as the assembly of the die in the discrete package.

We also provide insights into technology data, manufacturing cost, and selling price of the component, as well as an estimated manufacturing cost of all the component’s parts.

Included too is a physical comparison between ROHM generations 2, 3, and 4. Also, a physical comparison between 750V and 1200V Gen4 dies is presented.

Last but not least, we furnish wafer and die cost comparisons focused on two ROHM trench devices (Gen3 vs. Gen4).

ROHM Semiconductor

KEY FEATURES:

• Detailed photos
• Precise measurements
• Materials analysis
• Manufacturing process flow
• Supply chain evaluation
• Manufacturing cost analysis
• Physical comparison: ROHM 4^th Generation: 750V vs. 1200V
• Physical comparison: ROHM SiC MOSFET generation evolution: 2, 3, and 4
• Physical and cost comparisons of ROHM trench technologies:  3^rd Generation vs. 4^th Generation

WHAT'S NEW:

• Latest generation of SiC MOSFET from ROHM
• Technical analysis of the ROHM 4th Gen in 750V and 1200V: comparing the two designs
• Deepest SiC trench on the market, exceeding every other SiC MOSFET design