Technology, Process and Cost

ROHM 4th Generation SiC MOSFET

By Yole SystemPlus

Discover the latest and most advanced generation of ROHM’s SiC MOSFET, offering superior electrical performance and the deepest SiC trenches on the market.


  • Detailed photos
  • Precise measurements
  • Materials analysis
  • Manufacturing process flow
  • Supply chain evaluation
  • Manufacturing cost analysis
  • Physical comparison: ROHM 4th Generation: 750V vs. 1200V
  • Physical comparison: ROHM SiC MOSFET generation evolution: 2, 3, and 4
  • Physical and cost comparisons of ROHM trench technologies:  3rd Generation vs. 4th Generation


  • Latest generation of SiC MOSFET from ROHM
  • Technical analysis of the ROHM 4th Gen in 750V and 1200V: comparing the two designs
  • Deepest SiC trench on the market, exceeding every other SiC MOSFET design

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