Technology, Process and Cost
Samsung 16Gb DDR5 DRAM Memory
By Yole SystemPlus —
Technology and cost analysis of 1y nm class DDR5 DRAM memory targeting server and PCs.
Samsung
KEY FEATURES
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Detailed photos
- Physical analysis
- Precise measurements
- Materials analysis
WHAT'S NEW
- First DDR5 by Yole SystemPlus
- Important memory used in leading-edge servers and PCs for high performance
- Reduced power consumption compared to previous DDR4 gen.
- Use of Samsung 1y nm technology node
- HKMG transistor process
Overview
- Executive Summary
- Reverse Costing Methodology
- Glossary
Company Profile
- Company Profile
- Location
- DDR Product Portfolio
Market Analysis
- Revenue
- Bit Growth
- PC Bit Demand
Physical Analysis
- Summary
- Module Disassembly
- Package Analysis
- (overview, X-Ray Images, cross section, opening)
- Memory Die Analysis
- (overview, cross section, opening, delayering, process)
Manufacturing process
- Global Overview
- DRAM Front-End Process
- DRAM Front-End Wafer Fabrication Unit
- DRAM Manufacturing Process
- Assembly and Final Test
Cost Analysis
- Cost Summary
- Yields Explanation & Hypotheses
- DRAM Die Front-End Wafer Cost
- DRAM Die Cost
- Packaging Cost
- Component Cost
Selling Price
- Definitions of Price
- Estimated Selling Price
Feedback
Related Products
About Yole Group
The dynamic random access memory (DRAM) market was valued at USD $94 billion in 2021, a 40% growth from 2020. DRAM market revenue is expected to increase, with growth estimated to be greater than 20% in 2022 compared to 2021. Samsung dominated the DRAM market in Q1 2022 with a market share estimated at 41%.
Patterning technology innovations continue to evolve with each generation in DRAM manufacturing to increase the number of memory cells per unit area. Each generation of DRAM memory is designed to have higher data rates and reduced power consumption to meet the demands for energy-saving and fast processors. DDR5 DRAM logic transistors use a high K metal gate (HKMG) process technology which was introduced to significantly improve the DRAM chip performance. Polysilicon transistors have a higher chance of leakage compared to HKMG transistors with enhanced insulation between closely-packed transistors.
Samsung produces 16Gb DDR5 dies with higher bandwidth compared to the previous generation of DDR4, hence improving computing power and providing reliable memory performance capable of satisfying the ever-increasing demands of the latest consumer needs and server expansion. DDR5 delivers significant power efficiency that is estimated to be 30% greater than the previous generation. The DDR5 memory is used both in consumer applications and datacenters. The consumer DIMMS use DDR5 packages that integrate a single DRAM memory die in the package. This report includes consumer DDDR5 memory.
This full reverse costing study was conducted to provide insight on the technology and manufacturing cost of Samsung’s first-generation DDR5 memory using 1y process technology. The memory is extracted from the Trident Z5 RGB series: the latest G.SKILL DIMM designed for ultra-high-performance targeting gamers, content creators, and consumers in need of a high-performance system. Included in this report is a teardown analysis of the DDR5 DRAM package and die, accompanied by optical and high-resolution SEM images. The die cross-section reveals the capacitor structure and transistors. Also included in this report is the manufacturing process of Samsung’s DDR5 16Gb memory. Finally, a cost analysis is furnished which includes an estimation of DRAM capacitor manufacture, transistor manufacture, and metal layers included in the process.
