SiC MOSFET Discretes Perfomance Comparison Analysis 2024 Vol 1

Overview / Introduction 

• Executive Summary
• Physical, Cost & Performance Analysis Methodology
• Glossary

Technology & Market Overview

Analyzed Devices: Supplier Datasheet & Company Profile

• 1200V SiC MOSFET:
  • Wolfspeed  C3M0075120D
  • ROHM  SCT3080KLHR
  • Infineon  AIMW120R080M1
  • STMicroelectronics   SCTW40N120G2VAG
  • Anbonsemi  AS1M080120P
• Reference 1200V Si IGBT device: Infineon IKW15N120CS7

Physical & Cost Analysis:

For each of the devices, a summary of:

• Package View, Opening & Cross-Section
• Die View & Cross Section
• Devices Manufacturing Cost

Performance Analysis  

• Test protocol & conditions
• For each of the DuT: Data & Graphs for the tested samples for each reference.

Comparison

• Performance comparaison graphs: I_D(V_D), I_SD(V_SD), R_DS(on)(I_DS), R_DS(on)(T_j), V_th(temp), V_DS, V_GS(th), I_DSS, V_BR(DSS), I_{GSS …}
• Physical vs. Performance comparison (Example: Figure Of Merit « specific resistance »)
• Cost vs. Performance Comparison: A comparative evaluation of device component cost versus Figure Of Merit.

Feedback 

Related Products 

About Yole Group  

Comparative Performance Analysis of 5 SiC MOSFETs

Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) have emerged as key components in power electronics, revolutionizing various applications due to their superior performance characteristics. SiC MOSFETs exhibit remarkable properties such as high breakdown voltage, low on-state resistance, and excellent thermal conductivity, making them ideal candidates for power switching devices in high-frequency and high-temperature environments. Indeed, Yole Group predicts that the SiC device market will be above $8B in 2028.

The ever-growing demand for efficient and reliable power electronic systems in industries such as electric vehicles, renewable energy, and industrial automation has intensified the need for a comprehensive analysis of SiC MOSFETs.

In this context, Yole Group powered by Serma Technologies, are happy to reveal the first volume of their new product of performance analysis report. In this volume, five 1200V-class SiC discrete MOSFETs (and a reference Si IGBT device) from worldwide players are evaluated and compared, assessing their key parameters and characteristics to provide valuable insights for engineers, researchers, and industries seeking optimized power solutions.

This report delves into the static performance of the selected SiC MOSFETs to gain a holistic understanding of their merits. The comparative analysis involves assessing key metrics such as on-state resistance, drain-to-source current, drain-to-source voltage, threshold voltage, leakage current, etc. under varying operating conditions. It includes data and graphs of the tested devices for: ID(VD), ISD(VSD), RDS(on)(IDS), RDS(on)(Tj), Vth(temp), VDS, VGS(th), IDSS, VBR(DSS), IGSS … Performance tests are conducted in accordance with JEDEC norms and standards such as JESD24 and JEP183. The test procedure is outlined in the report. Performance tests are carried out on three Devices under Test (DuT) for each reference.

Additionally, Yole Group has performed a physical analysis of all devices, providing optical and SEM images along with detailed measurements for package opening and die cross-section. Manufacturing costs are also provided for each device. The parameters derived from the physical analysis and the calculated costs are compiled to facilitate a comprehensive analysis and comparison with the performance analysis results.

Also included, a technology and physical comparison of the devices. A “performance versus cost” evaluation is proposed as well.

• Wolfspeed 
• ROHM 
• Infineon 
• STMicroelectronics 
• Anbonsemi 

Key Features :

• Static Performance test Analysis and comparison of various metrics:  on-state resistance, threshold voltage, breakdown voltage, leakage currents (gate-source, drain-source)…
• Main Physical Analysis linked to performance metrics. (Package opening, Die cross-section…)
• Performance comparison versus technology & cost.

Report objectives:

• Provide a performance analysis and comparison of 5 discrete SiC MOSFETs of 1200V-class from worldwide players: Wolfspeed (C3M0075120D), ROHM (SCT3080KLHR), Infineon (AIMW120R080M1), STMicroelectronics (SCTW40N120G2VAG), Anbonsemi (AS1M080120P), and a reference Si IGBT device from Infineon (IKW15N120CS7)
• Provide a comprehensive evaluation of the device's behavior under steady-state conditions.
• Compare the measured performance parameters of the tested devices.
• Highlight the merits of the tested device based on the static performance test results.
• The performance analysis focuses on the static performances of the devices. No dynamic test is performed in this volume of the report.

Analyzed devices :

Devices analyzed from worldwide players with some SiC leaders:

• 1200V SiC MOSFETs:
  • Wolfspeed  C3M0075120D
  • ROHM  SCT3080KLHR
  • Infineon  AIMW120R080M1
  • STMicroelectronics  SCTW40N120G2VAG
  • Anbonsemi  AS1M080120P
• Reference 1200V Si IGBT Device: Infineon IKW15N120CS7